Inventor
BUEHLMANN SIMON
KR10 patents
⚠️ This page may combine multiple inventors who share the name “BUEHLMANN SIMON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
8 patentsUS7901804B2Mar 8, 2011
Ferroelectric media manufacturing method thereof and information storage device using the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US7660146B2Feb 9, 2010
Ferroelectric recording medium
SAMSUNG ELECTRONICS CO LTD4 citations61
US7449346B2Nov 11, 2008
Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same method
SAMSUNG ELECTRONICS CO LTD2 citations60
US7923262B2Apr 12, 2011
Method of manufacturing patterned ferroelectric media
SAMSUNG ELECTRONICS CO LTD1 citations51
US7897415B2Mar 1, 2011
Ferroelectric recording medium and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7885169B2Feb 8, 2011
Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7787351B2Aug 31, 2010
Bit recording process on ferroelectric medium using probe or small conductive structure and recording medium thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US7440302B2Oct 21, 2008
Ferroelectric information storage device and method of writing/reading information
SAMSUNG ELECTRONICS CO LTD0 citations51
HONG SEUNG-BUM
2 patentsUS8206803B2Jun 26, 2012
Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium
HONG SEUNG-BUM4 citations60
US8642155B2Feb 4, 2014
Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium
HONG SEUNG-BUM0 citations46