Inventor
IMAIZUMI MASAYUKI
JP38 patents
⚠️ This page may combine multiple inventors who share the name “IMAIZUMI MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS9741797B2Aug 22, 2017
Insulated gate silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP10 citations84
US9214458B2Dec 15, 2015
Semiconductor device
MITSUBISHI ELECTRIC CORP9 citations84
US7285465B2Oct 23, 2007
Method of manufacturing a SiC vertical MOSFET
MITSUBISHI ELECTRIC CORP10 citations83
US10510843B2Dec 17, 2019
Insulated gate silicon carbide semiconductor device and method for manufacturing same
MITSUBISHI ELECTRIC CORP5 citations73
US9614029B2Apr 4, 2017
Trench-gate type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP2 citations73
US9577086B2Feb 21, 2017
Semiconductor device
MITSUBISHI ELECTRIC CORP5 citations73
US9425261B2Aug 23, 2016
Silicon-carbide semiconductor device and method for manufacturing the same
MITSUBISHI ELECTRIC CORP5 citations73
US10418444B2Sep 17, 2019
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP2 citations72
US7029969B2Apr 18, 2006
Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle
MITSUBISHI ELECTRIC CORP7 citations72
US9515145B2Dec 6, 2016
Vertical MOSFET device with steady on-resistance
MITSUBISHI ELECTRIC CORP5 citations70
US9985093B2May 29, 2018
Trench-gate type semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations63
US10886372B2Jan 5, 2021
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US9184307B2Nov 10, 2015
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP3 citations62
US8026160B2Sep 27, 2011
Semiconductor device and semiconductor device manufacturing method
MITSUBISHI ELECTRIC CORP2 citations61
US7928469B2Apr 19, 2011
MOSFET and method for manufacturing MOSFET
MITSUBISHI ELECTRIC CORP2 citations60
US10304939B2May 28, 2019
SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US9337271B2May 10, 2016
Silicon-carbide semiconductor device and manufacturing method therefor
MITSUBISHI ELECTRIC CORP1 citations52
US9954072B2Apr 24, 2018
Silicon-carbide semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP0 citations41