Inventor
LEE MIN-HUNG
TW20 patents
⚠️ This page may combine multiple inventors who share the name “LEE MIN-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS9978868B2May 22, 2018
Negative capacitance field effect transistor with charged dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD35 citations93
US9768030B2Sep 19, 2017
Method for forming tunnel MOSFET with ferroelectric gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US12408389B2Sep 2, 2025
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12062719B2Aug 13, 2024
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11942546B2Mar 26, 2024
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12588214B2Mar 24, 2026
Integrated circuit device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations56
US12334148B2Jun 17, 2025
Method of operating memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US10686072B2Jun 16, 2020
Semiconductor device and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12580014B2Mar 17, 2026
Memory device and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46
IND TECH RES INST
6 patentsUS7626191B2Dec 1, 2009
Lateral phase change memory with spacer electrodes
IND TECH RES INST10 citations83
US7282414B2Oct 16, 2007
Fabrication methods for compressive strained-silicon and transistors using the same
IND TECH RES INST12 citations81
US7835177B2Nov 16, 2010
Phase change memory cell and method of fabricating
IND TECH RES INST6 citations61
US7741169B2Jun 22, 2010
Mobility enhancement by strained channel CMOSFET with single workfunction metal-gate and fabrication method thereof
IND TECH RES INST6 citations60
US7868314B2Jan 11, 2011
Phase change memory device and fabricating method therefor
IND TECH RES INST0 citations51
US7598113B2Oct 6, 2009
Phase change memory device and fabricating method therefor
IND TECH RES INST1 citations51