Inventor
LIN TUNG-YANG
TW15 patents
⚠️ This page may combine multiple inventors who share the name “LIN TUNG-YANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS12027526B2Jul 2, 2024
Breakdown voltage capability of high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508757B2Nov 22, 2022
Breakdown voltage capability of high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230709B2Feb 18, 2025
Transistor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532701B2Dec 20, 2022
Semiconductor isolation structure and method for making the semiconductor isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11456380B2Sep 27, 2022
Transistor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10038090B2Jul 31, 2018
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10014288B2Jul 3, 2018
Ultra high voltage electrostatic discharge protection device with current gain
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9865748B2Jan 9, 2018
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9627551B2Apr 18, 2017
Ultrahigh-voltage semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9601616B2Mar 21, 2017
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9431531B2Aug 30, 2016
Semiconductor device having drain side contact through buried oxide
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9412863B2Aug 9, 2016
Enhanced breakdown voltages for high voltage MOSFETS
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
3 patentsUS9000517B2Apr 7, 2015
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG6 citations83
US9356139B2May 31, 2016
Power MOSFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG1 citations62
US9379179B2Jun 28, 2016
Ultra high voltage electrostatic discharge protection device with current gain
TAIWAN SEMICONDUCTOR MFG0 citations51