Inventor · disambiguated record
Keejong Kim
Also filed as: KIM KEEJONG
10 granted patents·2 pending applications·89 citations·filing 2007–2021
87Inventor score
Top patents by PatentIndex Score
12 records- 0196US11114176B1Systems and methods to provide write termination for one time programmable memory cellsQUALCOMM INC·Filed 2020·Granted Sep 7, 2021·7 cites·30 claims
- 0294US9646681B1Memory cell with improved write marginQUALCOMM INC·Filed 2016·Granted May 9, 2017·18 cites·20 claims
- 0393US7508697B1Self-repairing technique in nano-scale SRAM to reduce parametric failuresPURDUE RESEARCH FOUNDATION·Filed 2007·Granted Mar 24, 2009·48 cites·4 claims
- 0489US11152038B2Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuitQUALCOMM INC·Filed 2020·Granted Oct 19, 2021·3 cites·11 claims
- 0588US10770132B1SRAM with burst mode address comparatorQUALCOMM INC·Filed 2019·Granted Sep 8, 2020·8 cites·22 claims
- 0678US10796735B1Read tracking scheme for a memory deviceQUALCOMM INC·Filed 2019·Granted Oct 6, 2020·4 cites·15 claims
- 0763US10923185B2SRAM with burst mode operationQUALCOMM INC·Filed 2019·Granted Feb 16, 2021·1 cites·14 claims
- 0860US11527282B2SRAM with burst mode operationQUALCOMM INC·Filed 2021·Granted Dec 13, 2022·0 cites·6 claims
- 0946US2020365222A1Physically unclonable function (puf) in programmable read-only memory (prom)QUALCOMM INC·Filed 2019·Application pending·0 cites
- 1040US9959912B2Timed sense amplifier circuits and methods in a semiconductor memoryQUALCOMM INC·Filed 2016·Granted May 1, 2018·0 cites·30 claims
- 1138US2020335151A1Low-power memoryQUALCOMM INC·Filed 2020·Application pending·0 cites
- 1236US9627041B1Memory with a voltage-adjustment circuit to adjust the operating voltage of memory cells for BTI effect screeningQUALCOMM INC·Filed 2016·Granted Apr 18, 2017·0 cites·26 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →