Inventor
VYTLA RAJEEV-KRISHNA
US10 patents
Patents
10 patentsUS9871128B2Jan 16, 2018
Bipolar semiconductor device with sub-cathode enhancement regions
INFINEON TECHNOLOGIES AMERICAS CORP3 citations71
US10224918B2Mar 5, 2019
Active gate bias driver
INFINEON TECHNOLOGIES AMERICAS CORP4 citations69
US9899477B2Feb 20, 2018
Edge termination structure having a termination charge region below a recessed field oxide region
INFINEON TECHNOLOGIES AMERICAS CORP4 citations65
US10680598B2Jun 9, 2020
Active gate bias driver
INFINEON TECHNOLOGIES AMERICAS CORP1 citations59
US10164078B2Dec 25, 2018
Bipolar semiconductor device with multi-trench enhancement regions
INFINEON TECHNOLOGIES AMERICAS CORP1 citations50
US10115812B2Oct 30, 2018
Semiconductor device having a superjunction structure
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50
US9831330B2Nov 28, 2017
Bipolar semiconductor device having a deep charge-balanced structure
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50
US9799725B2Oct 24, 2017
IGBT having a deep superjunction structure
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50
US9768284B2Sep 19, 2017
Bipolar semiconductor device having a charge-balanced inter-trench structure
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50
US9685506B2Jun 20, 2017
IGBT having an inter-trench superjunction structure
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50