Inventor
JEONG SANG-SUP
KR31 patents
⚠️ This page may combine multiple inventors who share the name “JEONG SANG-SUP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS6617253B1Sep 9, 2003
Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method
SAMSUNG ELECTRONICS CO LTD465 citations99
US6461911B2Oct 8, 2002
Semiconductor memory device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD129 citations98
US6573551B1Jun 3, 2003
Semiconductor memory device having self-aligned contact and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD23 citations92
US5903351AMay 11, 1999
Method and apparatus for selective spectroscopic analysis of a wafer surface and gas phase elements in a reaction chamber
SAMSUNG ELECTRONICS CO LTD29 citations92
US6177320B1Jan 23, 2001
Method for forming a self aligned contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD50 citations91
US7572711B2Aug 11, 2009
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations84
US7438765B2Oct 21, 2008
Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods
SAMSUNG ELECTRONICS CO LTD11 citations84
US6461975B1Oct 8, 2002
Method of etching insulating layer in semiconductor device
SAMSUNG ELECTRONICS CO LTD16 citations84
US6348375B1Feb 19, 2002
Method of fabricating a bit line structure for a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations84
US6337275B1Jan 8, 2002
Method for forming a self aligned contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations84
US8790976B2Jul 29, 2014
Method of forming semiconductor device having self-aligned plug
SAMSUNG ELECTRONICS CO LTD5 citations83
US6451663B1Sep 17, 2002
Method of manufacturing a cylindrical storage node in a semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations73
US7091117B2Aug 15, 2006
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations63
US7557026B2Jul 7, 2009
Contact structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7109080B2Sep 19, 2006
Method of forming capacitor over bitline contact
SAMSUNG ELECTRONICS CO LTD4 citations62
US8053358B2Nov 8, 2011
Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation
SAMSUNG ELECTRONICS CO LTD4 citations61
US7875551B2Jan 25, 2011
Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation
SAMSUNG ELECTRONICS CO LTD3 citations61
US7161205B2Jan 9, 2007
Semiconductor memory device with cylindrical storage electrode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US8017485B2Sep 13, 2011
Methods of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations60
US8003487B2Aug 23, 2011
Methods of manufacturing a semiconductor device using a layer suspended across a trench
SAMSUNG ELECTRONICS CO LTD4 citations58
US7863677B2Jan 4, 2011
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US6682975B2Jan 27, 2004
Semiconductor memory device having self-aligned contact and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US7312117B2Dec 25, 2007
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations51
PARK JONG-CHUL
5 patentsUS8916447B2Dec 23, 2014
Method of fabricating semiconductor device
PARK JONG-CHUL10 citations84
US8906763B2Dec 9, 2014
Method of manufacturing a dynamic random access memory (DRAM) including forming contact pads of adjacent cells by laterally etching a contact opening of a cell therebetween
PARK JONG-CHUL13 citations84
US8445379B2May 21, 2013
Method of manufacturing semiconductor device
PARK JONG-CHUL4 citations62
US8067285B2Nov 29, 2011
Methods of forming a conductive layer structure and methods of manufacturing a recessed channel transistor including the same
PARK JONG-CHUL4 citations60
US8778757B2Jul 15, 2014
Methods of manufacturing a DRAM device
PARK JONG-CHUL0 citations41