P

Inventor

PARK JONG-CHUL

KR79 patents
⚠️ This page may combine multiple inventors who share the name “PARK JONG-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US6872258B2Mar 29, 2005

Shower head of a wafer treatment apparatus having a gap controller

SAMSUNG ELECTRONICS CO LTD600 citations98
US7572711B2Aug 11, 2009

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations84
US7534726B2May 19, 2009

Method of forming a recess channel trench pattern, and fabricating a recess channel transistor

SAMSUNG ELECTRONICS CO LTD8 citations84
US7438765B2Oct 21, 2008

Adjustable shielding plate for adjusting an etching area of a semiconductor wafer and related apparatus and methods

SAMSUNG ELECTRONICS CO LTD11 citations84
US7205199B2Apr 17, 2007

Method of forming a recess channel trench pattern, and fabricating a recess channel transistor

SAMSUNG ELECTRONICS CO LTD10 citations84
US7160789B2Jan 9, 2007

Shallow trench isolation and method of forming the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US7157770B2Jan 2, 2007

MOS transistor with recessed gate and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US9852804B2Dec 26, 2017

Nonvolatile memory device, memory system, method of operating nonvolatile memory device, and method of operating memory system

SAMSUNG ELECTRONICS CO LTD14 citations82
US7326619B2Feb 5, 2008

Method of manufacturing integrated circuit device including recessed channel transistor

SAMSUNG ELECTRONICS CO LTD10 citations82
US10461127B2Oct 29, 2019

Variable resistance memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10454028B2Oct 22, 2019

Semiconductor devices including a plurality of stacked cell structures

SAMSUNG ELECTRONICS CO LTD2 citations73
US10153327B1Dec 11, 2018

Semiconductor device including data storage pattern between isolation lines

SAMSUNG ELECTRONICS CO LTD6 citations73
US11417652B2Aug 16, 2022

Semiconductor device with a contact plug adjacent a gate structure

SAMSUNG ELECTRONICS CO LTD4 citations72
US10971210B2Apr 6, 2021

Nonvolatile memory device and operating method of the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10885983B2Jan 5, 2021

Nonvolatile memory device and operating method of the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10403817B2Sep 3, 2019

Memory device with memory cell pillar having resistive memory layer with wedge memory portion and body memory portion, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US9997566B1Jun 12, 2018

Magnetoresistive random access memory devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations71
US11804535B2Oct 31, 2023

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US5816097AOct 6, 1998

Position control apparatus for gyroscope

SAMSUNG ELECTRONICS CO LTD6 citations63
US12062660B2Aug 13, 2024

Semiconductor device with a contact plug adjacent a gate structure

SAMSUNG ELECTRONICS CO LTD0 citations62
US11482288B2Oct 25, 2022

Nonvolatile memory device and method for operating with varying programming time

SAMSUNG ELECTRONICS CO LTD0 citations62
US11024397B2Jun 1, 2021

Nonvolatile memory device with verification signal to indicate success or failure of programming memory cell and method for operating thereof

SAMSUNG ELECTRONICS CO LTD0 citations62
US7109080B2Sep 19, 2006

Method of forming capacitor over bitline contact

SAMSUNG ELECTRONICS CO LTD4 citations62
US10916700B2Feb 9, 2021

Memory device with memory cell pillar having resistive memory layer with wedge memory portion and body memory portion, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US8053358B2Nov 8, 2011

Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation

SAMSUNG ELECTRONICS CO LTD4 citations61
US7875551B2Jan 25, 2011

Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation

SAMSUNG ELECTRONICS CO LTD3 citations61
US7531414B2May 12, 2009

Method of manufacturing integrated circuit device including recessed channel transistor

SAMSUNG ELECTRONICS CO LTD4 citations61
US7455076B2Nov 25, 2008

Apparatus and method for controlling exhaust pressure in semiconductor manufacturing

SAMSUNG ELECTRONICS CO LTD4 citations61
US11848364B2Dec 19, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US11250911B2Feb 15, 2022

Nonvolatile memory device and operating method of the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US11164631B2Nov 2, 2021

Nonvolatile memory device and operating method of the same

SAMSUNG ELECTRONICS CO LTD0 citations60

PARK JONG-CHUL

6 patents

LG ELECTRONICS INC

3 patents

JOUNG YOUNG CHUL

2 patents

PARK JONG CHUL

2 patents

TELWAVE INC

1 patent

KU JEONG-HOE

1 patent

JIOS AEROGEL CORP

1 patent

NOH EUN-SUN

1 patent

KWON MIN CHEOL

1 patent

ARMACELL JIOS AEROGELS LTD

1 patent

Showing the top 50 of 79 patents by PatentIndex Score.