Inventor
KELKAR AMIT S
US18 patents
⚠️ This page may combine multiple inventors who share the name “KELKAR AMIT S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MAXIM INTEGRATED PRODUCTS
10 patentsUS9324687B1Apr 26, 2016
Wafer-level passive device integration
MAXIM INTEGRATED PRODUCTS26 citations93
US9704809B2Jul 11, 2017
Fan-out and heterogeneous packaging of electronic components
MAXIM INTEGRATED PRODUCTS7 citations84
US9000587B1Apr 7, 2015
Wafer-level thin chip integration
MAXIM INTEGRATED PRODUCTS11 citations82
US10134689B1Nov 20, 2018
Warpage compensation metal for wafer level packaging technology
MAXIM INTEGRATED PRODUCTS5 citations71
US8878350B1Nov 4, 2014
Semiconductor device having a buffer material and stiffener
MAXIM INTEGRATED PRODUCTS3 citations61
US9331048B2May 3, 2016
Bonded stacked wafers and methods of electroplating bonded stacked wafers
MAXIM INTEGRATED PRODUCTS1 citations51
US10032749B2Jul 24, 2018
Three-dimensional chip-to-wafer integration
MAXIM INTEGRATED PRODUCTS0 citations50
US9472451B2Oct 18, 2016
Technique for wafer-level processing of QFN packages
MAXIM INTEGRATED PRODUCTS0 citations50
US9219043B2Dec 22, 2015
Wafer-level package device having high-standoff peripheral solder bumps
MAXIM INTEGRATED PRODUCTS0 citations50
US9040386B2May 26, 2015
Method for varied topographic MEMS cap process
MAXIM INTEGRATED PRODUCTS0 citations47
ATMEL CORP
6 patentsUS6291367B1Sep 18, 2001
Method for depositing a selected thickness of an interlevel dielectric material to achieve optimum global planarity on a semiconductor wafer
ATMEL CORP51 citations92
US6489254B1Dec 3, 2002
Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
ATMEL CORP28 citations90
US6828212B2Dec 7, 2004
Method of forming shallow trench isolation structure in a semiconductor device
ATMEL CORP10 citations69
US6709990B2Mar 23, 2004
Method for fabrication of a high capacitance interpoly dielectric
ATMEL CORP2 citations58
USRE40507ESep 16, 2008
Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
ATMEL CORP0 citations50
US6495475B2Dec 17, 2002
Method for fabrication of a high capacitance interpoly dielectric
ATMEL CORP1 citations48