Inventor

ZHAO JIN-SHI

KR9 patents

⚠️ This page may combine multiple inventors who share the name “ZHAO JIN-SHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

5 patents

US7952163B2May 31, 2011

Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems

SAMSUNG ELECTRONICS CO LTD43 citations96

US7838863B2Nov 23, 2010

Semiconductor devices having resistive memory elements

SAMSUNG ELECTRONICS CO LTD6 citations70

US9159914B2Oct 13, 2015

Nonvolatile memory devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations51

US8698281B2Apr 15, 2014

Nonvolatile memory devices that use resistance materials and internal electrodes

SAMSUNG ELECTRONICS CO LTD0 citations51

US8358527B2Jan 22, 2013

Multi-level nonvolatile memory devices using variable resistive elements

SAMSUNG ELECTRONICS CO LTD0 citations51

YOON HONGSIK

1 patent

US8338224B2Dec 25, 2012

Resistance-type random access memory device having three-dimensional bit line and word line patterning

YOON HONGSIK35 citations90

YOON HONG-SIK

1 patent

US8451645B2May 28, 2013

Variable resistance memory devices and methods of programming variable resistance memory devices

YOON HONG-SIK10 citations81

YIM EUN-KYUNG

1 patent

US8614125B2Dec 24, 2013

Nonvolatile memory devices and methods of forming the same

YIM EUN-KYUNG6 citations78

BAEK IN-GYU

1 patent

US8314003B2Nov 20, 2012

Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems

BAEK IN-GYU0 citations50