P

Inventor

PLOSS REINHARD

DE17 patents
⚠️ This page may combine multiple inventors who share the name “PLOSS REINHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

12 patents
US9245811B2Jan 26, 2016

Method for postdoping a semiconductor wafer

INFINEON TECHNOLOGIES AG7 citations83
US6646304B1Nov 11, 2003

Universal semiconductor wafer for high-voltage semiconductor components

INFINEON TECHNOLOGIES AG11 citations73
US10340335B2Jul 2, 2019

Method of forming a semiconductor device

INFINEON TECHNOLOGIES AG1 citations72
US9559020B2Jan 31, 2017

Method for postdoping a semiconductor wafer

INFINEON TECHNOLOGIES AG2 citations72
US7772693B2Aug 10, 2010

Panel, semiconductor device and method for the production thereof

INFINEON TECHNOLOGIES AG4 citations63
US11888024B2Jan 30, 2024

Method of forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations62
US11139369B2Oct 5, 2021

Method of forming a semiconductor device

INFINEON TECHNOLOGIES AG1 citations62
US11251269B2Feb 15, 2022

Semiconductor device including trench gate structure and manufacturing method

INFINEON TECHNOLOGIES AG0 citations52
US9384960B2Jul 5, 2016

Method of manufacturing a semiconductor device with a continuous silicate glass structure

INFINEON TECHNOLOGIES AG0 citations51
US9142401B2Sep 22, 2015

Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure

INFINEON TECHNOLOGIES AG0 citations51
US10014400B2Jul 3, 2018

Semiconductor device having a defined oxygen concentration

INFINEON TECHNOLOGIES AG1 citations49
US9728395B2Aug 8, 2017

Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen

INFINEON TECHNOLOGIES AG0 citations49

INFINEON TECHNOLOGIES AUSTRIA AG

2 patents

MAUDER ANTON

1 patent

KOLLER ADOLF

1 patent

SCHULZE HANS-JOACHIM

1 patent