Inventor
PLOSS REINHARD
DE17 patents
⚠️ This page may combine multiple inventors who share the name “PLOSS REINHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS9245811B2Jan 26, 2016
Method for postdoping a semiconductor wafer
INFINEON TECHNOLOGIES AG7 citations83
US6646304B1Nov 11, 2003
Universal semiconductor wafer for high-voltage semiconductor components
INFINEON TECHNOLOGIES AG11 citations73
US10340335B2Jul 2, 2019
Method of forming a semiconductor device
INFINEON TECHNOLOGIES AG1 citations72
US9559020B2Jan 31, 2017
Method for postdoping a semiconductor wafer
INFINEON TECHNOLOGIES AG2 citations72
US7772693B2Aug 10, 2010
Panel, semiconductor device and method for the production thereof
INFINEON TECHNOLOGIES AG4 citations63
US11888024B2Jan 30, 2024
Method of forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations62
US11139369B2Oct 5, 2021
Method of forming a semiconductor device
INFINEON TECHNOLOGIES AG1 citations62
US11251269B2Feb 15, 2022
Semiconductor device including trench gate structure and manufacturing method
INFINEON TECHNOLOGIES AG0 citations52
US9384960B2Jul 5, 2016
Method of manufacturing a semiconductor device with a continuous silicate glass structure
INFINEON TECHNOLOGIES AG0 citations51
US9142401B2Sep 22, 2015
Semiconductor device and method of manufacturing a semiconductor device with a continuous silicate glass structure
INFINEON TECHNOLOGIES AG0 citations51
US10014400B2Jul 3, 2018
Semiconductor device having a defined oxygen concentration
INFINEON TECHNOLOGIES AG1 citations49
US9728395B2Aug 8, 2017
Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen
INFINEON TECHNOLOGIES AG0 citations49
INFINEON TECHNOLOGIES AUSTRIA AG
2 patentsUS9842904B2Dec 12, 2017
Method of manufacturing a semiconductor device having a trench at least partially filled with a conductive material in a semiconductor substrate
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9570566B2Feb 14, 2017
Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrate
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52