Inventor
MOSER BENJAMIN G
US5 patents
Patents
5 patentsUS9685334B1Jun 20, 2017
Methods of forming semiconductor fin with carbon dopant for diffusion control
GLOBALFOUNDRIES INC6 citations68
US9583397B1Feb 28, 2017
Source/drain terminal contact and method of forming same
GLOBALFOUNDRIES INC5 citations68
US10020260B1Jul 10, 2018
Corrosion and/or etch protection layer for contacts and interconnect metallization integration
GLOBALFOUNDRIES INC0 citations49
US10263065B2Apr 16, 2019
Metal resistor forming method using ion implantation
GLOBALFOUNDRIES INC0 citations47
US9748235B2Aug 29, 2017
Gate stack for integrated circuit structure and method of forming same
GLOBALFOUNDRIES INC0 citations38