Inventor
KIM JUNGTAEK
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KIM JUNGTAEK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS11888026B2Jan 30, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations73
US11195954B2Dec 7, 2021
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11211457B2Dec 28, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11183562B2Nov 23, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations71
US12324195B2Jun 3, 2025
Multi-channel field effect transistors with enhanced multi-layered source/drain regions
SAMSUNG ELECTRONICS CO LTD1 citations62
US12396224B2Aug 19, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11777032B2Oct 3, 2023
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11710772B2Jul 25, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12557362B2Feb 17, 2026
Semiconductor device including source/drain pattern with varied germanium concentrations
SAMSUNG ELECTRONICS CO LTD0 citations60
US11862682B2Jan 2, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11676963B2Jun 13, 2023
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11264381B2Mar 1, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations58
US10304834B2May 28, 2019
Semiconductor devices and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12538517B2Jan 27, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12543338B2Feb 3, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12453148B2Oct 21, 2025
Integrated circuit device including field-effect transistor with controlled sizes and configurations
SAMSUNG ELECTRONICS CO LTD0 citations49
US12414337B2Sep 9, 2025
Semiconductor device including reflow layers
SAMSUNG ELECTRONICS CO LTD0 citations49
US12382716B2Aug 5, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations49
US12471345B2Nov 11, 2025
Semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations46