Inventor
DECHENE JESSICA
US20 patents
⚠️ This page may combine multiple inventors who share the name “DECHENE JESSICA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
10 patentsUS9450095B1Sep 20, 2016
Single spacer for complementary metal oxide semiconductor process flow
IBM24 citations94
US9859212B1Jan 2, 2018
Multi-level air gap formation in dual-damascene structure
IBM4 citations83
US10276436B2Apr 30, 2019
Selective recessing to form a fully aligned via
IBM2 citations73
US10049974B2Aug 14, 2018
Metal silicate spacers for fully aligned vias
IBM4 citations73
US9754942B2Sep 5, 2017
Single spacer for complementary metal oxide semiconductor process flow
IBM2 citations73
US10586733B2Mar 10, 2020
Multi-level air gap formation in dual-damascene structure
IBM1 citations72
US10224239B2Mar 5, 2019
Multi-level air gap formation in dual-damascene structure
IBM3 citations72
US9748146B1Aug 29, 2017
Single spacer for complementary metal oxide semiconductor process flow
IBM1 citations63
US10211138B2Feb 19, 2019
Metal silicate spacers for fully aligned vias
IBM0 citations52
US10204827B2Feb 12, 2019
Multi-level air gap formation in dual-damascene structure
IBM0 citations51
GLOBALFOUNDRIES INC
5 patentsUS10325819B1Jun 18, 2019
Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
GLOBALFOUNDRIES INC15 citations84
US10269654B1Apr 23, 2019
Methods, apparatus and system for replacement contact for a finFET device
GLOBALFOUNDRIES INC12 citations82
US10204797B1Feb 12, 2019
Methods, apparatus, and system for reducing step height difference in semiconductor devices
GLOBALFOUNDRIES INC2 citations71
US10833160B1Nov 10, 2020
Field-effect transistors with self-aligned and non-self-aligned contact openings
GLOBALFOUNDRIES INC3 citations69
US10453751B2Oct 22, 2019
Tone inversion method and structure for selective contact via patterning
GLOBALFOUNDRIES INC0 citations38