Inventor
DIAO ZHITAO
US43 patents
⚠️ This page may combine multiple inventors who share the name “DIAO ZHITAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GRANDIS INC
16 patentsUS7369427B2May 6, 2008
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
GRANDIS INC201 citations99
US7242045B2Jul 10, 2007
Spin transfer magnetic element having low saturation magnetization free layers
GRANDIS INC220 citations99
US7187577B1Mar 6, 2007
Method and system for providing current balanced writing for memory cells and magnetic devices
GRANDIS INC393 citations99
US7430135B2Sep 30, 2008
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
GRANDIS INC218 citations98
US7289356B2Oct 30, 2007
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
GRANDIS INC193 citations98
US7859034B2Dec 28, 2010
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer
GRANDIS INC24 citations92
US7760474B1Jul 20, 2010
Magnetic element utilizing free layer engineering
GRANDIS INC23 citations92
US7663848B1Feb 16, 2010
Magnetic memories utilizing a magnetic element having an engineered free layer
GRANDIS INC31 citations92
US7973349B2Jul 5, 2011
Magnetic device having multilayered free ferromagnetic layer
GRANDIS INC20 citations84
US7916433B2Mar 29, 2011
Magnetic element utilizing free layer engineering
GRANDIS INC12 citations84
US7851840B2Dec 14, 2010
Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier
GRANDIS INC18 citations84
US7777261B2Aug 17, 2010
Magnetic device having stabilized free ferromagnetic layer
GRANDIS INC13 citations84
US7738287B2Jun 15, 2010
Method and system for providing field biased magnetic memory devices
GRANDIS INC12 citations84
US7982275B2Jul 19, 2011
Magnetic element having low saturation magnetization
GRANDIS INC14 citations81
US7821087B2Oct 26, 2010
Spin transfer magnetic element having low saturation magnetization free layers
GRANDIS INC5 citations62
US7495303B2Feb 24, 2009
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
GRANDIS INC0 citations52
WESTERN DIGITAL TECH INC
9 patentsUS11430592B2Aug 30, 2022
Magnetic elements of amorphous based dual free layer structures and recording devices using such elements
WESTERN DIGITAL TECH INC2 citations73
US11211083B1Dec 28, 2021
MAMR head with synthetic antiferromagnetic (SAF) coupled notch
WESTERN DIGITAL TECH INC2 citations73
US12106784B2Oct 1, 2024
Read sensor with ordered heusler alloy free layer and semiconductor barrier layer
WESTERN DIGITAL TECH INC0 citations63
US11776725B2Oct 3, 2023
Magnetic elements of amorphous based dual free layer structures and recording devices using such elements
WESTERN DIGITAL TECH INC0 citations63
US11125840B2Sep 21, 2021
Ultra-low RA and high TMR magnetic sensor with radiation reflective lead
WESTERN DIGITAL TECH INC0 citations63
US11415645B2Aug 16, 2022
Magnetic sensor array with one TMR stack having two free layers
WESTERN DIGITAL TECH INC0 citations62
US12374356B1Jul 29, 2025
Pinned shield with controllable exchange bias field
WESTERN DIGITAL TECH INC0 citations52
US11598828B2Mar 7, 2023
Magnetic sensor array with different RA TMR film
WESTERN DIGITAL TECH INC0 citations52
US11385305B2Jul 12, 2022
Magnetic sensor array with dual TMR film
WESTERN DIGITAL TECH INC0 citations52
WESTERN DIGITAL FREMONT LLC
7 patentsUS8760818B1Jun 24, 2014
Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys
WESTERN DIGITAL FREMONT LLC149 citations99
US9214172B2Dec 15, 2015
Method of manufacturing a magnetic read head
WESTERN DIGITAL FREMONT LLC11 citations84
US9214169B1Dec 15, 2015
Magnetic recording read transducer having a laminated free layer
WESTERN DIGITAL FREMONT LLC8 citations84
US9042057B1May 26, 2015
Methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys
WESTERN DIGITAL FREMONT LLC6 citations84
US9007725B1Apr 14, 2015
Sensor with positive coupling between dual ferromagnetic free layer laminates
WESTERN DIGITAL FREMONT LLC10 citations84
US9147408B1Sep 29, 2015
Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field
WESTERN DIGITAL FREMONT LLC3 citations63
US8984740B1Mar 24, 2015
Process for providing a magnetic recording transducer having a smooth magnetic seed layer
WESTERN DIGITAL FREMONT LLC2 citations63
WESTERN DIGITAL (FREMONT) LLC
3 patentsUS9508365B1Nov 29, 2016
Magnetic reader having a crystal decoupling structure
WESTERN DIGITAL (FREMONT) LLC5 citations72
US9858951B1Jan 2, 2018
Method for providing a multilayer AFM layer in a read sensor
WESTERN DIGITAL (FREMONT) LLC0 citations52
US9830936B2Nov 28, 2017
Magnetic read head with antiferromagentic layer
WESTERN DIGITAL (FREMONT) LLC1 citations52
WATTS STEVEN M
2 patentsUS8913350B2Dec 16, 2014
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
WATTS STEVEN M10 citations82
US10446209B2Oct 15, 2019
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements
WATTS STEVEN M1 citations60