P

Inventor

DIAO ZHITAO

US43 patents
⚠️ This page may combine multiple inventors who share the name “DIAO ZHITAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GRANDIS INC

16 patents
US7369427B2May 6, 2008

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

GRANDIS INC201 citations99
US7242045B2Jul 10, 2007

Spin transfer magnetic element having low saturation magnetization free layers

GRANDIS INC220 citations99
US7187577B1Mar 6, 2007

Method and system for providing current balanced writing for memory cells and magnetic devices

GRANDIS INC393 citations99
US7430135B2Sep 30, 2008

Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

GRANDIS INC218 citations98
US7289356B2Oct 30, 2007

Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein

GRANDIS INC193 citations98
US7859034B2Dec 28, 2010

Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

GRANDIS INC24 citations92
US7760474B1Jul 20, 2010

Magnetic element utilizing free layer engineering

GRANDIS INC23 citations92
US7663848B1Feb 16, 2010

Magnetic memories utilizing a magnetic element having an engineered free layer

GRANDIS INC31 citations92
US7973349B2Jul 5, 2011

Magnetic device having multilayered free ferromagnetic layer

GRANDIS INC20 citations84
US7916433B2Mar 29, 2011

Magnetic element utilizing free layer engineering

GRANDIS INC12 citations84
US7851840B2Dec 14, 2010

Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier

GRANDIS INC18 citations84
US7777261B2Aug 17, 2010

Magnetic device having stabilized free ferromagnetic layer

GRANDIS INC13 citations84
US7738287B2Jun 15, 2010

Method and system for providing field biased magnetic memory devices

GRANDIS INC12 citations84
US7982275B2Jul 19, 2011

Magnetic element having low saturation magnetization

GRANDIS INC14 citations81
US7821087B2Oct 26, 2010

Spin transfer magnetic element having low saturation magnetization free layers

GRANDIS INC5 citations62
US7495303B2Feb 24, 2009

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

GRANDIS INC0 citations52

WESTERN DIGITAL TECH INC

9 patents

WESTERN DIGITAL FREMONT LLC

7 patents

WESTERN DIGITAL (FREMONT) LLC

3 patents

WATTS STEVEN M

2 patents

ZHENG YUANKAI

1 patent

WESTERN DIGITAL FREMONT INC

1 patent

SANDISK TECHNOLOGIES LLC

1 patent

SONY CORP

1 patent

SAMSUNG ELECTRONICS CO LTD

1 patent

NAGAI HIDE

1 patent