Inventor

HUAI YIMING

US191 patents

⚠️ This page may combine multiple inventors who share the name “HUAI YIMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUAI YIMING

GRANDIS INC

Magnetic tunnel junction having diffusion stop layer

Current driven memory cells having enhanced current and enhanced current symmetry

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

Method and system for providing a magnetic memory structure utilizing spin transfer

Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells

Stress assisted current driven switching for magnetic memory applications

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

Magnetoresistive element having reduced spin transfer induced noise

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

Spin transfer magnetic element having low saturation magnetization free layers

Spin transfer magnetic elements with spin depolarization layers

Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

Spin-transfer multilayer stack containing magnetic layers with resettable magnetization

Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements

Spin scattering and heat assisted switching of a magnetic element

Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer

Magnetic element utilizing spin transfer and an mram device using the magnetic element

Re-configurable logic elements using heat assisted magnetic tunneling elements

Three-terminal magnetostatically coupled spin transfer-based MRAM cell

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

Magnetic memory element utilizing spin transfer switching and storing multiple bits

Perpendicular magnetization magnetic element utilizing spin transfer

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

Methods for providing a sub .15 micron magnetic memory structure

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

Magnetic elements having a bias field and magnetic memory devices using the magnetic elements

Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

AVALANCHE TECHNOLOGY INC

Multilayered seed structure for perpendicular MTJ memory element

Magnetic memory element with composite perpendicular enhancement layer

Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer

Magnetic random access memory having perpendicular enhancement layer

WESTERN DIGITAL FREMONT INC

Top spin valve with improved seed layer

Method and system for providing a dual spin filter

Magnetoresistive sensor with overlapping lead layers including alpha tantalum and conductive layers

READ RITE CORP

Magnetic head with a toroidal coil encompassing only one yoke layer

Apparatus for producing a uniform magnetic field over a large surface area of a wafer

SATOH KIMIHIRO

Redeposition control in MRAM fabrication process

MRAM fabrication method with sidewall cleaning

WESTERN DIGITAL FREMONT LLC

Method for forming a hard bias structure in a magnetoresistive sensor

JUNG DONG HA

MTJ MRAM with stud patterning