Inventor
YU TEA-KWANG
KR23 patents
⚠️ This page may combine multiple inventors who share the name “YU TEA-KWANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS9595612B2Mar 14, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US9263588B2Feb 16, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations84
US9082865B2Jul 14, 2015
Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US7812375B2Oct 12, 2010
Non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US9728544B2Aug 8, 2017
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD16 citations81
US7833875B2Nov 16, 2010
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US8362545B2Jan 29, 2013
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US8969939B2Mar 3, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US8913430B2Dec 16, 2014
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US7928495B2Apr 19, 2011
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7408219B2Aug 5, 2008
Nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations62
US7863110B2Jan 4, 2011
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations57
US9847422B2Dec 19, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9184232B2Nov 10, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7429511B2Sep 30, 2008
Method of forming a tunneling insulating layer in nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations41
YU TEA-KWANG
3 patentsUS8604535B2Dec 10, 2013
Non-volatile memory device and method of manufacturing the same
YU TEA-KWANG0 citations49
US9312184B2Apr 12, 2016
Semiconductor devices and methods of manufacturing the same
YU TEA-KWANG1 citations48
US8476130B2Jul 2, 2013
Semiconductor device and method of fabricating semiconductor device
YU TEA-KWANG0 citations37