P

Inventor

YU TEA-KWANG

KR23 patents
⚠️ This page may combine multiple inventors who share the name “YU TEA-KWANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US9595612B2Mar 14, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations84
US9263588B2Feb 16, 2016

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations84
US9082865B2Jul 14, 2015

Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US7812375B2Oct 12, 2010

Non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US9728544B2Aug 8, 2017

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations81
US7833875B2Nov 16, 2010

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US8362545B2Jan 29, 2013

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US8969939B2Mar 3, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US8913430B2Dec 16, 2014

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations62
US7928495B2Apr 19, 2011

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7408219B2Aug 5, 2008

Nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD3 citations62
US7863110B2Jan 4, 2011

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations57
US9847422B2Dec 19, 2017

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9184232B2Nov 10, 2015

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7429511B2Sep 30, 2008

Method of forming a tunneling insulating layer in nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations41

YU TEA-KWANG

3 patents

KIM JUNG-HWAN

2 patents

JEON CHANG-MIN

1 patent

LEE YONG-KYU

1 patent

SEO BO-YOUNG

1 patent