Inventor

MUKHERJEE SATYENDRANATH

US15 patents

⚠️ This page may combine multiple inventors who share the name “MUKHERJEE SATYENDRANATH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PHILIPS CORP

10 patents

US5268586ADec 7, 1993

Vertical power MOS device with increased ruggedness and method of fabrication

PHILIPS CORP46 citations96

US4939566AJul 3, 1990

Semiconductor switch with parallel DMOS and IGT

PHILIPS CORP69 citations96

US4926074AMay 15, 1990

Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor

PHILIPS CORP61 citations96

US5146426ASep 8, 1992

Electrically erasable and programmable read only memory with trench structure

PHILIPS CORP114 citations95

US5485292AJan 16, 1996

High voltage differential sensor having a capacitive attenuator

PHILIPS CORP24 citations92

US5229312AJul 20, 1993

Nonvolatile trench memory device and self-aligned method for making such a device

PHILIPS CORP32 citations88

US5374571ADec 20, 1994

Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

PHILIPS CORP14 citations73

PHILIPS ELECTRONICS NA

3 patents

US5606521AFeb 25, 1997

Electrically erasable and programmable read only memory with non-uniform dielectric thickness

PHILIPS ELECTRONICS NA84 citations95

US6011278AJan 4, 2000

Lateral silicon carbide semiconductor device having a drift region with a varying doping level

PHILIPS ELECTRONICS NA22 citations92

US5751038AMay 12, 1998

Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers

PHILIPS ELECTRONICS NA50 citations92

PHILIP ELECTRONICS NORTH AMERI

1 patent

US5486485AJan 23, 1996

Method of manufacturing a reflective display

PHILIP ELECTRONICS NORTH AMERI20 citations89

KONINKL PHILIPS ELECTRONICS NV

1 patent

US6559068B2May 6, 2003

Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor

KONINKL PHILIPS ELECTRONICS NV16 citations83

MUKHERJEE SATYENDRANATH

PHILIPS CORP

Vertical power MOS device with increased ruggedness and method of fabrication

Semiconductor switch with parallel DMOS and IGT

Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor

Electrically erasable and programmable read only memory with trench structure

High voltage differential sensor having a capacitive attenuator

Nonvolatile trench memory device and self-aligned method for making such a device

Vertical power MOS device with increased ruggedness and method of fabrication

MOS transistor with semi-insulating field plate and surface-adjoining top layer

Protection of power integrated circuits against load voltage surges

Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

PHILIPS ELECTRONICS NA

Electrically erasable and programmable read only memory with non-uniform dielectric thickness

Lateral silicon carbide semiconductor device having a drift region with a varying doping level

Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers

PHILIP ELECTRONICS NORTH AMERI

Method of manufacturing a reflective display

KONINKL PHILIPS ELECTRONICS NV

Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor