Inventor
CHENG PO LUN
CN18 patents
⚠️ This page may combine multiple inventors who share the name “CHENG PO LUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
10 patentsUS7456087B2Nov 25, 2008
Semiconductor device and method of fabricating the same
UNITED MICROELECTRONICS CORP70 citations97
US7592231B2Sep 22, 2009
MOS transistor and fabrication thereof
UNITED MICROELECTRONICS CORP110 citations96
US7186605B2Mar 6, 2007
Method of fabricating gates
UNITED MICROELECTRONICS CORP28 citations92
US7402496B2Jul 22, 2008
Complementary metal-oxide-semiconductor device and fabricating method thereof
UNITED MICROELECTRONICS CORP29 citations89
US7371649B2May 13, 2008
Method of forming carbon-containing silicon nitride layer
UNITED MICROELECTRONICS CORP17 citations83
US7745847B2Jun 29, 2010
Metal oxide semiconductor transistor
UNITED MICROELECTRONICS CORP11 citations82
US7335607B2Feb 26, 2008
Method of forming a gate dielectric layer
UNITED MICROELECTRONICS CORP2 citations62
US7329591B2Feb 12, 2008
Method for forming silicon-containing film and method for decreasing number of particles
UNITED MICROELECTRONICS CORP1 citations49
US9761687B2Sep 12, 2017
Method of forming gate dielectric layer for MOS transistor
UNITED MICROELECTRONICS CORP0 citations33
US9761693B2Sep 12, 2017
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations28
CHENG PO-LUN
4 patentsUS8288802B2Oct 16, 2012
Spacer structure wherein carbon-containing oxynitride film formed within
CHENG PO-LUN5 citations71
US8106466B2Jan 31, 2012
MOS transistor and method for fabricating the same
CHENG PO-LUN2 citations57
US8415723B2Apr 9, 2013
Spacer structure wherein carbon-containing oxide film formed within
CHENG PO-LUN0 citations49
US8716092B2May 6, 2014
Method for fabricating MOS transistors
CHENG PO-LUN1 citations46