Inventor

HUANG HUAI-YING

TW41 patents

⚠️ This page may combine multiple inventors who share the name “HUANG HUAI-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUANG HUAI-YING

TAIWAN SEMICONDUCTOR MFG CO LTD

Circuit having a non-symmetrical layout

Method for programming memory

Method for programming memory

Memory array and method of forming thereof

Method for programming memory

Manufacturing process with atomic level inspection

Integrated circuit device and manufacturing method of the same

Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defects

Manufacturing process with atomic level inspection

Semiconductor device

Memory array and method of forming thereof

Inspection layer to improve the detection of defects through optical systems and methods of inspecting semiconductor device for defects

Memory device

Antiferroelectric non-volatile memory

Metallization layer and fabrication method

Metallization layer and fabrication method

Stacked SRAM device

Multi-gate semiconductor device for memory and method for forming the same

Structures, devices and methods for memory devices

Memory device layout, semiconductor device, and method of manufacturing memory device

Structures, devices and methods for memory devices

Method for non-destructive inspection of cell etch redeposition

Method for non-destructive inspection of cell etch redeposition

Methods and devices for intra-connection structures

Static random access memory

TAIWAN SEMICONDUCTOR MFG

8T low leakage SRAM cell

SRAM design with separated VSS

Integrated semiconductor structure for SRAM and fabrication methods thereof

Stable SRAM cell

Stable SRAM cell

Stable SRAM cell

Memory device with an asymmetric layout structure

SRAM cell with improved layout designs

Well implant through dummy gate oxide in gate-last process

CHANG FENG-MING

SRAM timing tracking circuit

Active region patterning in double patterning processes

HUNG SHENG CHIANG

Integrated semiconductor structure for SRAM and fabrication methods thereof

Well implant through dummy gate oxide in gate-last process

HUANG HUAI-YING

Stable SRAM cell

TAIWAN SEMIOCONDUCTOR MFG CO L

Dual-port SRAM device

LIN TZU-KUEI

Word line layout for semiconductor memory