Inventor
HILLIGER ANDREAS
JP22 patents
⚠️ This page may combine multiple inventors who share the name “HILLIGER ANDREAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS6787831B2Sep 7, 2004
Barrier stack with improved barrier properties
INFINEON TECHNOLOGIES AG15 citations91
US6800890B1Oct 5, 2004
Memory architecture with series grouped by cells
INFINEON TECHNOLOGIES AG14 citations83
US6611449B1Aug 26, 2003
Contact for memory cells
INFINEON TECHNOLOGIES AG13 citations83
US7071506B2Jul 4, 2006
Device for inhibiting hydrogen damage in ferroelectric capacitor devices
INFINEON TECHNOLOGIES AG9 citations73
US6906908B1Jun 14, 2005
Semiconductor device and method of manufacturing the same
INFINEON TECHNOLOGIES AG9 citations73
US6724026B2Apr 20, 2004
Memory architecture with memory cell groups
INFINEON TECHNOLOGIES AG12 citations71
US6815234B2Nov 9, 2004
Reducing stress in integrated circuits
INFINEON TECHNOLOGIES AG8 citations70
US7042037B1May 9, 2006
Semiconductor device
INFINEON TECHNOLOGIES AG2 citations62
US6858442B2Feb 22, 2005
Ferroelectric memory integrated circuit with improved reliability
INFINEON TECHNOLOGIES AG5 citations62
US6839220B1Jan 4, 2005
Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
INFINEON TECHNOLOGIES AG2 citations62
US7101785B2Sep 5, 2006
Formation of a contact in a device, and the device including the contact
INFINEON TECHNOLOGIES AG3 citations61
US6614642B1Sep 2, 2003
Capacitor over plug structure
INFINEON TECHNOLOGIES AG3 citations61
US7084027B2Aug 1, 2006
Method for producing an integrated circuit
INFINEON TECHNOLOGIES AG2 citations58
US7378700B2May 27, 2008
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US7061035B2Jun 13, 2006
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US7002196B2Feb 21, 2006
Ferroelectric capacitor devices and FeRAM devices
INFINEON TECHNOLOGIES AG0 citations51
US6621683B1Sep 16, 2003
Memory cells with improved reliability
INFINEON TECHNOLOGIES AG1 citations51
TOSHIBA KK
4 patentsUS6677630B1Jan 13, 2004
Semiconductor device having ferroelectric film and manufacturing method thereof
TOSHIBA KK21 citations92
US6855565B2Feb 15, 2005
Semiconductor device having ferroelectric film and manufacturing method thereof
TOSHIBA KK12 citations84
US7042705B2May 9, 2006
Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing
TOSHIBA KK3 citations62
US7009230B2Mar 7, 2006
Barrier stack with improved barrier properties
TOSHIBA KK0 citations52