Inventor

KURATA YASUSHI

JP38 patents

⚠️ This page may combine multiple inventors who share the name “KURATA YASUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KURATA YASUSHI

HITACHI CHEMICAL CO LTD

Cerium oxide abrasive and method of polishing substrates

Cerium oxide abrasive for polishing insulating films formed on substrate and methods for using the same

Cerium oxide abrasive and method of polishing substrates

Abrasive, method of polishing wafer, and method of producing semiconductor device

CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate

Polishing fluid and polishing method

Method of growing a rare earth silicate single crystal

Method of growing single crystal

CMP polishing compound and polishing method

Scintillator single crystal and production method of same

CMP polishing slurry and polishing method

Polishing fluid and method of polishing

Single crystal for scintillator and method for manufacturing same

Single crystal heat treatment method

Polishing medium for chemical-mechanical polishing, and method of polishing substrate member

Polishing compound for chemimechanical polishing and polishing method

Cerium oxide abrasive and method of polishing substrates

Abrasive, method of polishing target member and process for producing semiconductor device

Method of producing a single crystal of a rare-earth silicate

Polishing slurry for chemical mechanical polishing and method for polishing substrate

CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate

Abrasive, method of polishing target member and process for producing semiconductor device

Abrasive, method of polishing target member and process for producing semiconductor device

Polishing medium for chemical-mechanical polishing, and method of polishing substrate member

Cerium oxide abrasive and method of polishing substrates

Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

MEIJI SEIKA KAISHA

Tetrahydrobenzindolone derivatives

Physiologically active substances PF1092A, PF1092B and PF1092C, process for the production thereof, and contraceptives and anticancer drugs containing the same as active ingredients

Physiologically active substances PF1092A, PF1092B and PF1092C, and contraceptives and anticancer drugs containing the same as active ingredients

YOSHIDA MASATO

Abrasive, method of polishing target member and process for producing semiconductor device

Abrasive, method of polishing target member and process for producing semiconductor device

Abrasive, method of polishing target member and process for producing semiconductor device

KURATA YASUSHI

Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystal

Polishing slurry and polishing method

FUKASAWA MASATO

CMP polishing slurry and polishing method

Cmp polishing slurry and method of polishing substrate

USUI TATSUYA

Single crystal heat treatment method

HAGA KOUJI

Polishing slurry for chemical mechanical polishing and method for polishing substrate