Inventor

OHTSUKI TSUYOSHI

JP20 patents

⚠️ This page may combine multiple inventors who share the name “OHTSUKI TSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OHTSUKI TSUYOSHI

SHINETSU HANDOTAI KK

Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor

Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment

Method for manufacturing semiconductor device and method for evaluating semiconductor device

Method for evaluating semiconductor substrate

Method for evaluating semiconductor wafer and apparatus for evaluating semiconductor wafer

Apparatus for evaluating semiconductor wafer

Method for evaluating semiconductor substrate

Method for evaluating a semiconductor wafer

Method for forming oxide film on silicon wafer

Silicon epitaxial wafer and a method for producing it

Method for evaluating SOI substrate

SHIN ETSU HANDOTAI CO LTD

Method for producing semiconductor apparatus for quantum computer

Method for producing semiconductor apparatus and semiconductor apparatus

Method for forming thermal oxide film on semiconductor substrate

Method for forming thermal oxide film on semiconductor substrate

OHTSUKI TSUYOSHI

Bonded substrate and manufacturing method thereof

Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate

Semiconductor substrate evaluating method, semiconductor substrate for evaluation, and semiconductor device

MITANI KIYOSHI

Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer

TAHARA FUMIO

Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer