Inventor
CALLEGARI ALESSANDRO C
US33 patents
⚠️ This page may combine multiple inventors who share the name “CALLEGARI ALESSANDRO C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
29 patentsUS6664186B1Dec 16, 2003
Method of film deposition, and fabrication of structures
IBM162 citations99
US6982230B2Jan 3, 2006
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
IBM112 citations98
US6511876B2Jan 28, 2003
High mobility FETS using A1203 as a gate oxide
IBM84 citations98
US5470661ANov 28, 1995
Diamond-like carbon films from a hydrocarbon helium plasma
IBM362 citations98
US6665033B2Dec 16, 2003
Method for forming alignment layer by ion beam surface modification
IBM63 citations96
US5569501AOct 29, 1996
Diamond-like carbon films from a hydrocarbon helium plasma
IBM82 citations95
US7569466B2Aug 4, 2009
Dual metal gate self-aligned integration
IBM19 citations92
US7223670B2May 29, 2007
DUV laser annealing and stabilization of SiCOH films
IBM33 citations92
US7015152B2Mar 21, 2006
Method of film deposition, and fabrication of structures
IBM15 citations92
US6573197B2Jun 3, 2003
Thermally stable poly-Si/high dielectric constant material interfaces
IBM32 citations92
US7115959B2Oct 3, 2006
Method of forming metal/high-k gate stacks with high mobility
IBM17 citations90
US4859253AAug 22, 1989
Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
IBM39 citations89
US8383483B2Feb 26, 2013
High performance CMOS circuits, and methods for fabricating same
IBM10 citations84
US7872317B2Jan 18, 2011
Dual metal gate self-aligned integration
IBM10 citations84
US7611979B2Nov 3, 2009
Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks
IBM8 citations84
US6682786B1Jan 27, 2004
Liquid crystal display cell having liquid crystal molecules in vertical or substantially vertical alignment
IBM18 citations82
US7097884B2Aug 29, 2006
Stability of ion beam generated alignment layers by surface modification
IBM5 citations73
US4853346AAug 1, 1989
Ohmic contacts for semiconductor devices and method for forming ohmic contacts
IBM10 citations72
US7833849B2Nov 16, 2010
Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode
IBM4 citations63
US7776701B2Aug 17, 2010
Metal oxynitride as a pFET material
IBM4 citations63
US7667277B2Feb 23, 2010
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
IBM4 citations63
US7436034B2Oct 14, 2008
Metal oxynitride as a pFET material
IBM4 citations63
US6583847B2Jun 24, 2003
Self alignment of substrates by magnetic alignment
IBM6 citations61
US7755159B2Jul 13, 2010
DUV laser annealing and stabilization of SiCOH films
IBM0 citations52
US7566938B2Jul 28, 2009
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
IBM0 citations52
US7560794B2Jul 14, 2009
DUV laser annealing and stabilization of SiCOH films
IBM0 citations52
US7521346B2Apr 21, 2009
Method of forming HfSiN metal for n-FET applications
IBM1 citations52
US7863083B2Jan 4, 2011
High temperature processing compatible metal gate electrode for pFETS and methods for fabrication
IBM1 citations51
US7772016B2Aug 10, 2010
Method for composition control of a metal compound film
IBM1 citations51