P

Inventor

CALLEGARI ALESSANDRO C

US33 patents
⚠️ This page may combine multiple inventors who share the name “CALLEGARI ALESSANDRO C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

29 patents
US6664186B1Dec 16, 2003

Method of film deposition, and fabrication of structures

IBM162 citations99
US6982230B2Jan 3, 2006

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

IBM112 citations98
US6511876B2Jan 28, 2003

High mobility FETS using A1203 as a gate oxide

IBM84 citations98
US5470661ANov 28, 1995

Diamond-like carbon films from a hydrocarbon helium plasma

IBM362 citations98
US6665033B2Dec 16, 2003

Method for forming alignment layer by ion beam surface modification

IBM63 citations96
US5569501AOct 29, 1996

Diamond-like carbon films from a hydrocarbon helium plasma

IBM82 citations95
US7569466B2Aug 4, 2009

Dual metal gate self-aligned integration

IBM19 citations92
US7223670B2May 29, 2007

DUV laser annealing and stabilization of SiCOH films

IBM33 citations92
US7015152B2Mar 21, 2006

Method of film deposition, and fabrication of structures

IBM15 citations92
US6573197B2Jun 3, 2003

Thermally stable poly-Si/high dielectric constant material interfaces

IBM32 citations92
US7115959B2Oct 3, 2006

Method of forming metal/high-k gate stacks with high mobility

IBM17 citations90
US4859253AAug 22, 1989

Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface

IBM39 citations89
US8383483B2Feb 26, 2013

High performance CMOS circuits, and methods for fabricating same

IBM10 citations84
US7872317B2Jan 18, 2011

Dual metal gate self-aligned integration

IBM10 citations84
US7611979B2Nov 3, 2009

Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks

IBM8 citations84
US6682786B1Jan 27, 2004

Liquid crystal display cell having liquid crystal molecules in vertical or substantially vertical alignment

IBM18 citations82
US7097884B2Aug 29, 2006

Stability of ion beam generated alignment layers by surface modification

IBM5 citations73
US4853346AAug 1, 1989

Ohmic contacts for semiconductor devices and method for forming ohmic contacts

IBM10 citations72
US7833849B2Nov 16, 2010

Method of fabricating a semiconductor structure including one device region having a metal gate electrode located atop a thinned polygate electrode

IBM4 citations63
US7776701B2Aug 17, 2010

Metal oxynitride as a pFET material

IBM4 citations63
US7667277B2Feb 23, 2010

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

IBM4 citations63
US7436034B2Oct 14, 2008

Metal oxynitride as a pFET material

IBM4 citations63
US6583847B2Jun 24, 2003

Self alignment of substrates by magnetic alignment

IBM6 citations61
US7755159B2Jul 13, 2010

DUV laser annealing and stabilization of SiCOH films

IBM0 citations52
US7566938B2Jul 28, 2009

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

IBM0 citations52
US7560794B2Jul 14, 2009

DUV laser annealing and stabilization of SiCOH films

IBM0 citations52
US7521346B2Apr 21, 2009

Method of forming HfSiN metal for n-FET applications

IBM1 citations52
US7863083B2Jan 4, 2011

High temperature processing compatible metal gate electrode for pFETS and methods for fabrication

IBM1 citations51
US7772016B2Aug 10, 2010

Method for composition control of a metal compound film

IBM1 citations51

BABICH KATHERINA E

2 patents

CALLEGARI ALESSANDRO C

1 patent

ANDREONI WANDA

1 patent