Inventor
D EMIC CHRISTOPHER P
US23 patents
⚠️ This page may combine multiple inventors who share the name “D EMIC CHRISTOPHER P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
19 patentsUS6524935B1Feb 25, 2003
Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique
IBM250 citations98
US6444592B1Sep 3, 2002
Interfacial oxidation process for high-k gate dielectric process integration
IBM191 citations98
US6893979B2May 17, 2005
Method for improved plasma nitridation of ultra thin gate dielectrics
IBM21 citations91
US7115959B2Oct 3, 2006
Method of forming metal/high-k gate stacks with high mobility
IBM17 citations90
US6350321B1Feb 26, 2002
UHV horizontal hot wall cluster CVD/growth design
IBM28 citations88
US9110014B2Aug 18, 2015
Field effect transistor-based bio-sensor
IBM5 citations83
US9647099B2May 9, 2017
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
IBM2 citations73
US6770500B2Aug 3, 2004
Process of passivating a metal-gated complementary metal oxide semiconductor
IBM10 citations73
US6642156B2Nov 4, 2003
Method for forming heavy nitrogen-doped ultra thin oxynitride gate dielectrics
IBM11 citations73
US7109559B2Sep 19, 2006
Nitrided ultra thin gate dielectrics
IBM6 citations72
US7078300B2Jul 18, 2006
Thin germanium oxynitride gate dielectric for germanium-based devices
IBM7 citations72
US8999739B2Apr 7, 2015
Field effect transistor-based bio-sensor
IBM3 citations62
US8994077B2Mar 31, 2015
Field effect transistor-based bio sensor
IBM3 citations62
US8917096B2Dec 23, 2014
Determination of isoelectric points of biomolecules using capacitive sensors
IBM2 citations62
US10236366B2Mar 19, 2019
Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
IBM0 citations52
US10056251B2Aug 21, 2018
Hetero-integration of III-N material on silicon
IBM0 citations52
US9691886B2Jun 27, 2017
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
IBM0 citations52
US9601583B2Mar 21, 2017
Hetero-integration of III-N material on silicon
IBM0 citations52
US9103770B2Aug 11, 2015
Determination of isoelectric points of biomolecules using capacitive sensors
IBM0 citations51
CAI JIN
3 patentsUS8586441B1Nov 19, 2013
Germanium lateral bipolar junction transistor
CAI JIN32 citations92
US8557670B1Oct 15, 2013
SOI lateral bipolar junction transistor having a wide band gap emitter contact
CAI JIN22 citations92
US8558282B1Oct 15, 2013
Germanium lateral bipolar junction transistor
CAI JIN26 citations92