Inventor

GRIBELYUK MICHAEL A

US27 patents

⚠️ This page may combine multiple inventors who share the name “GRIBELYUK MICHAEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GRIBELYUK MICHAEL A

IBM

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

High mobility FETS using A1203 as a gate oxide

Chemical treatment to retard diffusion in a semiconductor overlayer

High-temperature stable gate structure with metallic electrode

Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs

Thermally stable poly-Si/high dielectric constant material interfaces

Method of forming metal/high-k gate stacks with high mobility

High performance CMOS circuits, and methods for fabricating same

Method for tuning the threshold voltage of a metal gate and high-k device

High-temperature stable gate structure with metallic electrode

Electron holography method

High-temperature stable gate structure with metallic electrode

Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs

Metal oxynitride as a pFET material

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Metal oxynitride as a pFET material

Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures

Polycrystalline silicon layer with nano-grain structure and method of manufacture

WESTERN DIGITAL TECH INC

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices

Magnetic heads having low magnetic coercivity (Hc) and high saturated magnetic flux density (Bs) in ferromagnetic (FM) layer(s) or shield(s) with minimized saturation

Highly textured 001 BiSb and materials for making same

Doping process to refine grain size for smoother BiSb film surface

Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

Nitrogen doped oxides for lower bandgap

SOT reader using BiSb topological insulator

CALLEGARI ALESSANDRO C

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

ANDREONI WANDA

Method of forming metal/high-κ gate stacks with high mobility