Inventor
LACEY DIANNE L
US11 patents
⚠️ This page may combine multiple inventors who share the name “LACEY DIANNE L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
9 patentsUS6982230B2Jan 3, 2006
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
IBM112 citations98
US6573197B2Jun 3, 2003
Thermally stable poly-Si/high dielectric constant material interfaces
IBM32 citations92
US7115959B2Oct 3, 2006
Method of forming metal/high-k gate stacks with high mobility
IBM17 citations90
US6798953B1Sep 28, 2004
Guides lithographically fabricated on semiconductor devices
IBM23 citations90
US4859253AAug 22, 1989
Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
IBM39 citations89
US4853346AAug 1, 1989
Ohmic contacts for semiconductor devices and method for forming ohmic contacts
IBM10 citations72
US7667277B2Feb 23, 2010
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
IBM4 citations63
US7566938B2Jul 28, 2009
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
IBM0 citations52
US7521346B2Apr 21, 2009
Method of forming HfSiN metal for n-FET applications
IBM1 citations52