Inventor
MCFEELY FENTON R
US38 patents
⚠️ This page may combine multiple inventors who share the name “MCFEELY FENTON R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
28 patentsUS7488656B2Feb 10, 2009
Removal of charged defects from metal oxide-gate stacks
IBM79 citations98
US6982230B2Jan 3, 2006
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
IBM112 citations98
US7270848B2Sep 18, 2007
Method for increasing deposition rates of metal layers from metal-carbonyl precursors
IBM45 citations96
US6448131B1Sep 10, 2002
Method for increasing the capacitance of a trench capacitor
IBM48 citations93
US7067422B2Jun 27, 2006
Method of forming a tantalum-containing gate electrode structure
IBM23 citations92
US6989321B2Jan 24, 2006
Low-pressure deposition of metal layers from metal-carbonyl precursors
IBM41 citations92
US6924223B2Aug 2, 2005
Method of forming a metal layer using an intermittent precursor gas flow process
IBM32 citations91
US6452276B1Sep 17, 2002
Ultra thin, single phase, diffusion barrier for metal conductors
IBM38 citations91
US7115959B2Oct 3, 2006
Method of forming metal/high-k gate stacks with high mobility
IBM17 citations90
US5395650AMar 7, 1995
Selective, low-temperature chemical vapor deposition of gold
IBM25 citations85
US7998864B2Aug 16, 2011
Noble metal cap for interconnect structures
IBM8 citations84
US7078341B2Jul 18, 2006
Method of depositing metal layers from metal-carbonyl precursors
IBM12 citations84
US6238737B1May 29, 2001
Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby
IBM14 citations74
US6803266B2Oct 12, 2004
Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby
IBM9 citations72
US6603181B2Aug 5, 2003
MOS device having a passivated semiconductor-dielectric interface
IBM9 citations72
US8785320B2Jul 22, 2014
Structure and process for metallization in high aspect ratio features
IBM1 citations63
US7964497B2Jun 21, 2011
Structure to facilitate plating into high aspect ratio vias
IBM2 citations63
US7884018B2Feb 8, 2011
Method for improving the selectivity of a CVD process
IBM6 citations63
US7667277B2Feb 23, 2010
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
IBM4 citations63
US7145212B2Dec 5, 2006
Method for manufacturing device substrate with metal back-gate and structure formed thereby
IBM3 citations63
US6797604B2Sep 28, 2004
Method for manufacturing device substrate with metal back-gate and structure formed thereby
IBM3 citations63
US7189431B2Mar 13, 2007
Method for forming a passivated metal layer
IBM5 citations62
US7749802B2Jul 6, 2010
Process for chemical vapor deposition of materials with via filling capability and structure formed thereby
IBM1 citations52
US7566938B2Jul 28, 2009
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
IBM0 citations52
US7521346B2Apr 21, 2009
Method of forming HfSiN metal for n-FET applications
IBM1 citations52
US7439180B2Oct 21, 2008
Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD)
IBM1 citations52
US6579614B2Jun 17, 2003
Structure having refractory metal film on a substrate
IBM1 citations52
US7863083B2Jan 4, 2011
High temperature processing compatible metal gate electrode for pFETS and methods for fabrication
IBM1 citations51
YANG CHIH-CHAO
3 patentsUS8232647B2Jul 31, 2012
Structure and process for metallization in high aspect ratio features
YANG CHIH-CHAO6 citations84
US8450204B2May 28, 2013
Structure and process for metallization in high aspect ratio features
YANG CHIH-CHAO1 citations63
US8497580B2Jul 30, 2013
Noble metal cap for interconnect structures
YANG CHIH-CHAO0 citations52
TOKYO ELECTRON LTD
3 patentsUS7345184B2Mar 18, 2008
Method and system for refurbishing a metal carbonyl precursor
TOKYO ELECTRON LTD5 citations63
US7678421B2Mar 16, 2010
Method for increasing deposition rates of metal layers from metal-carbonyl precursors
TOKYO ELECTRON LTD2 citations62
US7419702B2Sep 2, 2008
Method for processing a substrate
TOKYO ELECTRON LTD1 citations49