P

Inventor

KIM SANGWOOK

KR81 patents
⚠️ This page may combine multiple inventors who share the name “KIM SANGWOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

41 patents
US7940085B2May 10, 2011

Inverter, method of operating the same and logic circuit comprising inverter

SAMSUNG ELECTRONICS CO LTD74 citations97
US7660720B2Feb 9, 2010

Lossless audio coding/decoding method and apparatus

SAMSUNG ELECTRONICS CO LTD24 citations91
US7617110B2Nov 10, 2009

Lossless audio decoding/encoding method, medium, and apparatus

SAMSUNG ELECTRONICS CO LTD35 citations89
US7752041B2Jul 6, 2010

Method and apparatus for encoding/decoding digital signal

SAMSUNG ELECTRONICS CO LTD10 citations82
US11973142B2Apr 30, 2024

Integrated circuit including transistors and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11677025B2Jun 13, 2023

Electronic device including ferroelectric layer

SAMSUNG ELECTRONICS CO LTD1 citations73
US11527646B2Dec 13, 2022

Domain switching devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US11522082B2Dec 6, 2022

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations73
US11417763B2Aug 16, 2022

Integrated circuit including transistors and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11349026B2May 31, 2022

Electronic device including ferroelectric layer

SAMSUNG ELECTRONICS CO LTD3 citations73
US10824043B2Nov 3, 2020

Optical modulating device and apparatus including the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10635391B2Apr 28, 2020

Electronic device and method for controlling an operation thereof

SAMSUNG ELECTRONICS CO LTD4 citations73
US10452349B2Oct 22, 2019

Electronic device and operation control method therefor

SAMSUNG ELECTRONICS CO LTD5 citations73
US10531243B2Jan 7, 2020

Method and apparatus for transmitting signals having temporal correlation

SAMSUNG ELECTRONICS CO LTD3 citations70
US10187506B2Jan 22, 2019

Dual subscriber identity module (SIM) card adapter for electronic device that allows for selection between SIM card(s) via GUI display

SAMSUNG ELECTRONICS CO LTD3 citations64
US8046235B2Oct 25, 2011

Apparatus and method of encoding audio data and apparatus and method of decoding encoded audio data

SAMSUNG ELECTRONICS CO LTD4 citations63
US7974840B2Jul 5, 2011

Method and apparatus for encoding/decoding MPEG-4 BSAC audio bitstream having ancillary information

SAMSUNG ELECTRONICS CO LTD3 citations63
US12457792B2Oct 28, 2025

Thin film structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12382644B2Aug 5, 2025

Thin film structure including dielectric material layer and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12369361B2Jul 22, 2025

Integrated circuit including transistors and a method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12283629B2Apr 22, 2025

Ferroelectric thin-film structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12230711B2Feb 18, 2025

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12224346B2Feb 11, 2025

Domain switching devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12191311B2Jan 7, 2025

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US12176413B2Dec 24, 2024

Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12170336B2Dec 17, 2024

Oxide semiconductor transistor, method of manufacturing the same, and memory device including oxide semiconductor transistor

SAMSUNG ELECTRONICS CO LTD0 citations62
US12100749B2Sep 24, 2024

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

SAMSUNG ELECTRONICS CO LTD0 citations62
US12094971B2Sep 17, 2024

Electronic device including ferroelectric layer

SAMSUNG ELECTRONICS CO LTD0 citations62
US11989646B2May 21, 2024

Neuromorphic apparatus having 3D stacked synaptic structure and memory device having the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11984514B2May 14, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11887989B2Jan 30, 2024

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

SAMSUNG ELECTRONICS CO LTD0 citations62
US11824119B2Nov 21, 2023

Domain switching devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11824118B2Nov 21, 2023

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11824117B2Nov 21, 2023

Oxide semiconductor transistor

SAMSUNG ELECTRONICS CO LTD0 citations62
US11699765B2Jul 11, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11646375B2May 9, 2023

Ferroelectric thin-film structure and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11604971B2Mar 14, 2023

Neuromorphic apparatus having 3D stacked synaptic structure and memory device having the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11600712B2Mar 7, 2023

Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11527635B2Dec 13, 2022

Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures

SAMSUNG ELECTRONICS CO LTD1 citations62
US11456351B2Sep 27, 2022

Thin film structure including dielectric material layer and electronic device employing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US7805314B2Sep 28, 2010

Method and apparatus to quantize/dequantize frequency amplitude data and method and apparatus to audio encode/decode using the method and apparatus to quantize/dequantize frequency amplitude data

SAMSUNG ELECTRONICS CO LTD4 citations62

KIM SANGWOOK

3 patents

INTEL CORP

2 patents

LG ELECTRONICS INC

2 patents

KIM CHANGJUNG

1 patent

SUNG HOSANG

1 patent

Showing the top 50 of 81 patents by PatentIndex Score.