Inventor

GAMERITH STEFAN

AT19 patents

⚠️ This page may combine multiple inventors who share the name “GAMERITH STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GAMERITH STEFAN

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region

Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area

Super junction semiconductor device having a compensation structure

Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body

Super junction semiconductor device having strip structures in a cell area

Semiconductor device with charge compensation

Radiation-hardened power semiconductor devices and methods of forming them

INFINEON TECHNOLOGIES AUSTRIA

Charge compensation semiconductor devices

Semiconductor device with a super junction structure with one, two or more pairs of compensation layers

Charge-compensation semiconductor device

Charge compensation semiconductor device

Semiconductor device with charge compensation structure arrangement for optimized on-state resistance and switching losses

Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure

WEBER HANS

Semiconductor device with self-charging field electrodes

Method for producing a semiconductor device including a dielectric layer

Method for producing a gate electrode structure

Method for producing an electrode structure

INFINEON TECHNOLOGIES AG

Semiconductor device having an electrostatic discharge protection structure