Inventor
HARRISON WALTER A
US14 patents
⚠️ This page may combine multiple inventors who share the name “HARRISON WALTER A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ACORN SEMI LLC
8 patentsUS11462643B2Oct 4, 2022
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC3 citations83
US10833199B2Nov 10, 2020
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC7 citations83
US12477776B2Nov 18, 2025
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC0 citations62
US12336263B2Jun 17, 2025
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations62
US12034078B2Jul 9, 2024
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN SEMI LLC0 citations62
US11804533B2Oct 31, 2023
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations62
US11610974B2Mar 21, 2023
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations62
US10879366B2Dec 29, 2020
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN SEMI LLC0 citations52
ACORN TECH INC
6 patentsUS9362376B2Jun 7, 2016
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC13 citations92
US10505047B2Dec 10, 2019
Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height
ACORN TECH INC5 citations84
US10170627B2Jan 1, 2019
Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
ACORN TECH INC9 citations84
US10505005B2Dec 10, 2019
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC0 citations52
US9755038B2Sep 5, 2017
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC0 citations52
US9484426B2Nov 1, 2016
Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
ACORN TECH INC0 citations52