Inventor
LIU SHENG-FENG
TW17 patents
⚠️ This page may combine multiple inventors who share the name “LIU SHENG-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS10032869B2Jul 24, 2018
Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11404369B2Aug 2, 2022
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11288437B2Mar 29, 2022
Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10867109B2Dec 15, 2020
Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10304772B2May 28, 2019
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11616124B2Mar 28, 2023
Method of making fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12099792B2Sep 24, 2024
Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046638B2Jul 23, 2024
Fin field effect transistor (FinFET) device having position-dependent heat generation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901289B2Feb 13, 2024
Semiconductor device structure with resistive element
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11687698B2Jun 27, 2023
Electromigration evaluation methodology with consideration of both self-heating and heat sink thermal effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107889B2Aug 31, 2021
Fin field effect transistor (FinFET) device having position-dependent heat generation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12438017B2Oct 7, 2025
Electromigration evaluation methodology with consideration of thermal and signal effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12027391B2Jul 2, 2024
Electromigration evaluation methodology with consideration of thermal and signal effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11658049B2May 23, 2023
Electromigration evaluation methodology with consideration of thermal and signal effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11107714B2Aug 31, 2021
Electromigration evaluation methodology with consideration of thermal and signal effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61