Inventor
SUN ZHONGWANG
CN26 patents
⚠️ This page may combine multiple inventors who share the name “SUN ZHONGWANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
25 patentsUS11862565B2Jan 2, 2024
Contact structures for three-dimensional memory
YANGTZE MEMORY TECH CO LTD4 citations75
US11696439B2Jul 4, 2023
Staircase structure in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11342264B2May 24, 2022
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD1 citations73
US12232313B2Feb 18, 2025
Staircase structure in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12207466B2Jan 21, 2025
Method of forming a three-dimensional NAND memory device with reduced RC delay
YANGTZE MEMORY TECH CO LTD0 citations62
US12068250B2Aug 20, 2024
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12046555B2Jul 23, 2024
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12041773B2Jul 16, 2024
Three-dimensional NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12033944B2Jul 9, 2024
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12022656B2Jun 25, 2024
Local contacts of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11862558B2Jan 2, 2024
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11749737B2Sep 5, 2023
Memory device with bottom-select-gate structure and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11699732B2Jul 11, 2023
Method for forming memory device comprising bottom-select-gate structure
YANGTZE MEMORY TECH CO LTD0 citations62
US11665892B2May 30, 2023
Staircase structure in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD1 citations62
US11600633B2Mar 7, 2023
Local contacts of three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11587945B2Feb 21, 2023
Three-dimensional NAND memory device with reduced RC delay
YANGTZE MEMORY TECH CO LTD0 citations62
US11183575B1Nov 23, 2021
Memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11910599B2Feb 20, 2024
Contact structures for three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations59
US11552091B2Jan 10, 2023
Contact structures for three-dimensional memory device
YANGTZE MEMORY TECH CO LTD0 citations59
US11839083B2Dec 5, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations58
US11282854B2Mar 22, 2022
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations58
US12144175B2Nov 12, 2024
Three dimensional NAND memory device with novel support structures
YANGTZE MEMORY TECH CO LTD0 citations52
US12096631B2Sep 17, 2024
Three-dimensional NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US11670592B2Jun 6, 2023
Staircase structure in three-dimensional memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52
US11239247B2Feb 1, 2022
Memory device and method for forming the same
YANGTZE MEMORY TECH CO LTD0 citations52