Inventor

JO SUNG-HYUN

US129 patents

⚠️ This page may combine multiple inventors who share the name “JO SUNG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JO SUNG-HYUN

CROSSBAR INC

Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects

Enhanced erasing of two-terminal memory

Selector device for two-terminal memory

Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects

Selector device for two-terminal memory

Hetero-switching layer in a RRAM device and method

Switching device having a non-linear element

Hereto resistive switching material layer in RRAM device and method

Read operation with data latch and signal termination for 1TNR memory array

Sub-oxide interface layer for two-terminal memory

Controlling on-state current for two-terminal memory

Neuromorphic logic for an array of high on/off ratio non-volatile memory cells

Switching block configuration bit comprising a non-volatile memory cell

Selector device for two-terminal memory

Switching block configuration bit comprising a non-volatile memory cell

Resistive memory architecture and devices

Noble metal / non-noble metal electrode for RRAM applications

Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process

Memory array architecture with two-terminal memory cells

Enhanced programming of two-terminal memory

Hetero-switching layer in a RRAM device and method

Device switching using layered device structure

Resistive RAM with preferental filament formation region and methods

Switching device having a non-linear element

Controlling on-state current for two-terminal memory

Resistive memory cell with solid state diode

Rectified switching of two-terminal memory via real time filament formation

Interface control for improved switching in RRAM

Reduced diffusion in metal electrode for two-terminal memory

Two-terminal memory electrode comprising a non-continuous contact surface

Three-dimensional oblique two-terminal memory with enhanced electric field

Resistive memory cell with intrinsic current control

Sensing a non-volatile memory device utilizing selector device holding characteristics

Soak time programming for two-terminal memory

JO SUNG HYUN

Hetero resistive switching material layer in RRAM device and method

Interface control for improved switching in RRAM

Multi-level cell operation using zinc oxide switching material in non-volatile memory device

Device switching using layered device structure

Integration of an amorphous silicon resistive switching device

Noble metal/non-noble metal electrode for RRAM applications

Conductive path in switching material in a resistive random access memory device and control

Resistor structure for a non-volatile memory device and method

LU WEI

Silicon based nanoscale crossbar memory

Switching device having a non-linear element

NAZARIAN HAGOP

Write and erase scheme for resistive memory device

Non-volatile variable capacitive device including resistive memory cell

UNIV MICHIGAN

Rectification element and method for resistive switching for non volatile memory device

SUN XIN

Low temperature P+ polycrystalline silicon material for non-volatile memory device

GEE HARRY

Three dimension programmable resistive random accessed memory array with shared bitline and method

UNIV MICHIGAN REGENTS

Silicon based nanoscale crossbar memory