Inventor
CHEN PO-CHIH
TW51 patents
⚠️ This page may combine multiple inventors who share the name “CHEN PO-CHIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
34 patentsUS10269949B2Apr 23, 2019
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9812562B1Nov 7, 2017
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9673323B2Jun 6, 2017
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9443969B2Sep 13, 2016
Transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10535730B2Jan 14, 2020
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11521915B2Dec 6, 2022
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12278272B2Apr 15, 2025
Source leakage current suppression by source surrounding gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11145713B2Oct 12, 2021
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9419093B2Aug 16, 2016
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12419074B2Sep 16, 2025
Barrier structure configured to increase performance of III-V devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107156B2Oct 1, 2024
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715792B2Aug 1, 2023
Barrier structure configured to increase performance of III-V devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532740B2Dec 20, 2022
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222968B2Jan 11, 2022
HEMT device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069805B2Jul 20, 2021
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964804B2Mar 30, 2021
Semiconductor structure, HEMT structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324211B2Jun 3, 2025
Ring transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11664431B2May 30, 2023
Ring transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094838B2Sep 17, 2024
Crack stop ring trench to prevent epitaxy crack propagation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11798899B2Oct 24, 2023
Crack stop ring trench to prevent epitaxy crack propagation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12046537B2Jul 23, 2024
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868134B2Dec 15, 2020
Method of making transistor having metal diffusion barrier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510882B2Dec 17, 2019
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9871030B2Jan 16, 2018
Plasma protection diode for a HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793371B2Oct 17, 2017
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9755045B2Sep 5, 2017
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660108B2May 23, 2017
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9570598B2Feb 14, 2017
Method of forming a semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502311B2Nov 22, 2016
Plasma protection diode for a HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9412835B2Aug 9, 2016
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9397168B2Jul 19, 2016
Method to define the active region of a transistor employing a group III-V semiconductor material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11862675B2Jan 2, 2024
High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10522671B2Dec 31, 2019
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10062776B2Aug 28, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
7 patentsUS9190535B2Nov 17, 2015
Bootstrap MOS for high voltage applications
TAIWAN SEMICONDUCTOR MFG12 citations84
US9111956B2Aug 18, 2015
Rectifier structures with low leakage
TAIWAN SEMICONDUCTOR MFG1 citations63
US9306012B2Apr 5, 2016
Strip-ground field plate
TAIWAN SEMICONDUCTOR MFG1 citations52
US9263565B2Feb 16, 2016
Method of forming a semiconductor structure
TAIWAN SEMICONDUCTOR MFG0 citations52
US9257979B2Feb 9, 2016
Embedded JFETs for high voltage applications
TAIWAN SEMICONDUCTOR MFG0 citations52
US9224829B2Dec 29, 2015
High electron mobility transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG1 citations52
US8946012B2Feb 3, 2015
Method of forming a semiconductor structure
TAIWAN SEMICONDUCTOR MFG0 citations52
WONG KING-YUEN
3 patentsUS9165839B2Oct 20, 2015
Plasma protection diode for a HEMT device
WONG KING-YUEN6 citations84
US8624296B1Jan 7, 2014
High electron mobility transistor including an embedded flourine region
WONG KING-YUEN18 citations84
US8748942B2Jun 10, 2014
High electron mobility transistor and method of forming the same
WONG KING-YUEN0 citations52
CHEN PO-CHIH
2 patentsHSU CHUN-WEI
1 patentYEH JEN-HAO
1 patentCHEN JIA-WOEI
1 patentCHEN PO CHIH
1 patentShowing the top 50 of 51 patents by PatentIndex Score.