P

Inventor

CHEN PO-CHIH

TW51 patents
⚠️ This page may combine multiple inventors who share the name “CHEN PO-CHIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

34 patents
US10269949B2Apr 23, 2019

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9812562B1Nov 7, 2017

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9673323B2Jun 6, 2017

Embedded JFETs for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9443969B2Sep 13, 2016

Transistor having metal diffusion barrier

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10535730B2Jan 14, 2020

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11521915B2Dec 6, 2022

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12278272B2Apr 15, 2025

Source leakage current suppression by source surrounding gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11145713B2Oct 12, 2021

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9419093B2Aug 16, 2016

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12419074B2Sep 16, 2025

Barrier structure configured to increase performance of III-V devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107156B2Oct 1, 2024

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715792B2Aug 1, 2023

Barrier structure configured to increase performance of III-V devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532740B2Dec 20, 2022

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222968B2Jan 11, 2022

HEMT device structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069805B2Jul 20, 2021

Embedded JFETs for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964804B2Mar 30, 2021

Semiconductor structure, HEMT structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324211B2Jun 3, 2025

Ring transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11664431B2May 30, 2023

Ring transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094838B2Sep 17, 2024

Crack stop ring trench to prevent epitaxy crack propagation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11798899B2Oct 24, 2023

Crack stop ring trench to prevent epitaxy crack propagation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12046537B2Jul 23, 2024

Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868134B2Dec 15, 2020

Method of making transistor having metal diffusion barrier

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510882B2Dec 17, 2019

Embedded JFETs for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9871030B2Jan 16, 2018

Plasma protection diode for a HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9793371B2Oct 17, 2017

Method of forming a high electron mobility transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9755045B2Sep 5, 2017

Rectifier structures with low leakage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9660108B2May 23, 2017

Bootstrap MOS for high voltage applications

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9570598B2Feb 14, 2017

Method of forming a semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502311B2Nov 22, 2016

Plasma protection diode for a HEMT device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9412835B2Aug 9, 2016

Rectifier structures with low leakage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9397168B2Jul 19, 2016

Method to define the active region of a transistor employing a group III-V semiconductor material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11862675B2Jan 2, 2024

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10522671B2Dec 31, 2019

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10062776B2Aug 28, 2018

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUCTOR MFG

7 patents

WONG KING-YUEN

3 patents

CHEN PO-CHIH

2 patents

HSU CHUN-WEI

1 patent

YEH JEN-HAO

1 patent

CHEN JIA-WOEI

1 patent

CHEN PO CHIH

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.