Inventor
WANG YUN-HSIANG
TW14 patents
Patents
14 patentsUS11521915B2Dec 6, 2022
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12278272B2Apr 15, 2025
Source leakage current suppression by source surrounding gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11195945B2Dec 7, 2021
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12419074B2Sep 16, 2025
Barrier structure configured to increase performance of III-V devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715792B2Aug 1, 2023
Barrier structure configured to increase performance of III-V devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363938B2Jul 15, 2025
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12100757B2Sep 24, 2024
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742419B2Aug 29, 2023
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12324211B2Jun 3, 2025
Ring transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11664431B2May 30, 2023
Ring transistor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12094838B2Sep 17, 2024
Crack stop ring trench to prevent epitaxy crack propagation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11798899B2Oct 24, 2023
Crack stop ring trench to prevent epitaxy crack propagation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12046537B2Jul 23, 2024
Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11791388B2Oct 17, 2023
Source leakage current suppression by source surrounding gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50