Inventor

NIEBOJEWSKI HEIMANU

FR19 patents

⚠️ This page may combine multiple inventors who share the name “NIEBOJEWSKI HEIMANU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NIEBOJEWSKI HEIMANU

COMMISSARIAT ENERGIE ATOMIQUE

Method of making a semiconductor layer having at least two different thicknesses

Method for manufacturing self-aligned exchange gates and associated semiconducting device

Quantum device integrating a buried metal electrode

Method for manufacturing a mixed substrate

Method for manufacturing a microelectronic device

Transistor with MIS connections and fabricating process

Method for manufacturing a quantum electronic circuit

Method for germanium enrichment around the channel of a transistor

Method of making a transistor

Method for making an integrated circuit

GLOBALFOUNDRIES INC

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

Method to increase effective gate height

Gate contact structures and cross-coupled contact structures for transistor devices

ST MICROELECTRONICS SA

Air-spacer MOS transistor

Method for forming gate, source, and drain contacts on a MOS transistor

GLOBALFOUNDRIES US INC

Gate contact structures and cross-coupled contact structures for transistor devices

Gate contact structures and cross-coupled contact structures for transistor devices

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT

Method of making a transistor