P

Inventor

ZHONG HUICAI

US85 patents
⚠️ This page may combine multiple inventors who share the name “ZHONG HUICAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

13 patents
US7071051B1Jul 4, 2006

Method for forming a thin, high quality buffer layer in a field effect transistor and related structure

ADVANCED MICRO DEVICES INC550 citations98
US7244644B2Jul 17, 2007

Undercut and residual spacer prevention for dual stressed layers

ADVANCED MICRO DEVICES INC19 citations92
US7157374B1Jan 2, 2007

Method for removing a cap from the gate of an embedded silicon germanium semiconductor device

ADVANCED MICRO DEVICES INC21 citations92
US6797572B1Sep 28, 2004

Method for forming a field effect transistor having a high-k gate dielectric and related structure

ADVANCED MICRO DEVICES INC36 citations92
US7176531B1Feb 13, 2007

CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric

ADVANCED MICRO DEVICES INC22 citations91
US6872613B1Mar 29, 2005

Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure

ADVANCED MICRO DEVICES INC28 citations91
US7169676B1Jan 30, 2007

Semiconductor devices and methods for forming the same including contacting gate to source

ADVANCED MICRO DEVICES INC19 citations84
US7022596B2Apr 4, 2006

Method for forming rectangular-shaped spacers for semiconductor devices

ADVANCED MICRO DEVICES INC8 citations74
US6902977B1Jun 7, 2005

Method for forming polysilicon gate on high-k dielectric and related structure

ADVANCED MICRO DEVICES INC10 citations74
US7033894B1Apr 25, 2006

Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing

ADVANCED MICRO DEVICES INC2 citations63
US6991990B1Jan 31, 2006

Method for forming a field effect transistor having a high-k gate dielectric

ADVANCED MICRO DEVICES INC3 citations63
US7456058B1Nov 25, 2008

Stressed MOS device and methods for its fabrication

ADVANCED MICRO DEVICES INC6 citations62
US6992370B1Jan 31, 2006

Memory cell structure having nitride layer with reduced charge loss and method for fabricating same

ADVANCED MICRO DEVICES INC2 citations60

ZHONG HUICAI

12 patents

LIANG QINGQING

10 patents

INST OF MICROELECTRONICS CAS

5 patents

IBM

3 patents

ZHU HUILONG

3 patents

UNIV NORTH CAROLINA STATE

1 patent

LUO ZHIJIONG

1 patent

GLOBALFOUNDRIES INC

1 patent

SANDISK 3D LLC

1 patent

Showing the top 50 of 85 patents by PatentIndex Score.