Inventor
ZHONG HUICAI
US85 patents
⚠️ This page may combine multiple inventors who share the name “ZHONG HUICAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
13 patentsUS7071051B1Jul 4, 2006
Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
ADVANCED MICRO DEVICES INC550 citations98
US7244644B2Jul 17, 2007
Undercut and residual spacer prevention for dual stressed layers
ADVANCED MICRO DEVICES INC19 citations92
US7157374B1Jan 2, 2007
Method for removing a cap from the gate of an embedded silicon germanium semiconductor device
ADVANCED MICRO DEVICES INC21 citations92
US6797572B1Sep 28, 2004
Method for forming a field effect transistor having a high-k gate dielectric and related structure
ADVANCED MICRO DEVICES INC36 citations92
US7176531B1Feb 13, 2007
CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric
ADVANCED MICRO DEVICES INC22 citations91
US6872613B1Mar 29, 2005
Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure
ADVANCED MICRO DEVICES INC28 citations91
US7169676B1Jan 30, 2007
Semiconductor devices and methods for forming the same including contacting gate to source
ADVANCED MICRO DEVICES INC19 citations84
US7022596B2Apr 4, 2006
Method for forming rectangular-shaped spacers for semiconductor devices
ADVANCED MICRO DEVICES INC8 citations74
US6902977B1Jun 7, 2005
Method for forming polysilicon gate on high-k dielectric and related structure
ADVANCED MICRO DEVICES INC10 citations74
US7033894B1Apr 25, 2006
Method for modulating flatband voltage of devices having high-k gate dielectrics by post-deposition annealing
ADVANCED MICRO DEVICES INC2 citations63
US6991990B1Jan 31, 2006
Method for forming a field effect transistor having a high-k gate dielectric
ADVANCED MICRO DEVICES INC3 citations63
US7456058B1Nov 25, 2008
Stressed MOS device and methods for its fabrication
ADVANCED MICRO DEVICES INC6 citations62
US6992370B1Jan 31, 2006
Memory cell structure having nitride layer with reduced charge loss and method for fabricating same
ADVANCED MICRO DEVICES INC2 citations60
ZHONG HUICAI
12 patentsUS9070719B2Jun 30, 2015
Semiconductor device structure, method for manufacturing the same, and method for manufacturing Fin
ZHONG HUICAI11 citations84
US8513742B2Aug 20, 2013
Method for manufacturing contact and semiconductor device having said contact
ZHONG HUICAI7 citations84
US8492206B2Jul 23, 2013
Semiconductor device structure and method for manufacturing the same
ZHONG HUICAI10 citations84
US9653358B2May 16, 2017
Semiconductor device structure and method for manufacturing the same
ZHONG HUICAI4 citations73
US9425288B2Aug 23, 2016
Method of manufacturing semiconductor device
ZHONG HUICAI6 citations73
US9293377B2Mar 22, 2016
Semiconductor device structure and method for manufacturing the same
ZHONG HUICAI4 citations73
US8987136B2Mar 24, 2015
Semiconductor device and method for manufacturing local interconnect structure thereof
ZHONG HUICAI5 citations73
US8652884B2Feb 18, 2014
Semiconductor device structure and method for manufacturing the same
ZHONG HUICAI4 citations73
US9024435B2May 5, 2015
Semiconductor device, formation method thereof, and package structure
ZHONG HUICAI3 citations63
US8759923B2Jun 24, 2014
Semiconductor device structure and method for manufacturing the same
ZHONG HUICAI2 citations63
US8716095B2May 6, 2014
Manufacturing method of gate stack and semiconductor device
ZHONG HUICAI2 citations63
US8420492B2Apr 16, 2013
MOS transistor and method for forming the same
ZHONG HUICAI3 citations63
LIANG QINGQING
10 patentsUS8592911B2Nov 26, 2013
Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the same
LIANG QINGQING11 citations84
US8859378B2Oct 14, 2014
Fin field-effect transistor and method for manufacturing the same
LIANG QINGQING5 citations73
US8610248B2Dec 17, 2013
Capacitor structure and method of manufacture
LIANG QINGQING5 citations73
US9013918B2Apr 21, 2015
Two-terminal memory cell and semiconductor memory device based on different states of stable current
LIANG QINGQING6 citations72
US8703558B2Apr 22, 2014
Graphene device and method for manufacturing the same
LIANG QINGQING4 citations72
US8975700B2Mar 10, 2015
Semiconductor device having a trench isolation structure
LIANG QINGQING3 citations63
US8779514B2Jul 15, 2014
Transistor and method for manufacturing the same
LIANG QINGQING3 citations63
US8557677B2Oct 15, 2013
Stack-type semiconductor device and method for manufacturing the same
LIANG QINGQING3 citations63
US8492210B2Jul 23, 2013
Transistor, semiconductor device comprising the transistor and method for manufacturing the same
LIANG QINGQING2 citations63
US8481379B2Jul 9, 2013
Method for manufacturing fin field-effect transistor
LIANG QINGQING4 citations63
INST OF MICROELECTRONICS CAS
5 patentsUS9397007B2Jul 19, 2016
Method for manufacturing semiconductor structure through forming an additional layer inside opening of a photoresist layer
INST OF MICROELECTRONICS CAS3 citations73
US10833086B2Nov 10, 2020
Semiconductor arrangement having continuous spacers and method of manufacturing the same
INST OF MICROELECTRONICS CAS1 citations72
US9379056B2Jun 28, 2016
Semiconductor structure and method for manufacturing the same
INST OF MICROELECTRONICS CAS2 citations63
US11251184B2Feb 15, 2022
Semiconductor arrangement having continuous spacers and method of manufacturing the same
INST OF MICROELECTRONICS CAS0 citations61
US11251183B2Feb 15, 2022
Semiconductor arrangement having continuous spacers and method of manufacturing the same
INST OF MICROELECTRONICS CAS0 citations61
IBM
3 patentsUS7288451B2Oct 30, 2007
Method and structure for forming self-aligned, dual stress liner for CMOS devices
IBM32 citations93
US7569892B2Aug 4, 2009
Method and structure for forming self-aligned, dual stress liner for CMOS devices
IBM7 citations74
US7485521B2Feb 3, 2009
Self-aligned dual stressed layers for NFET and PFET
IBM5 citations63
ZHU HUILONG
3 patentsUS8829621B2Sep 9, 2014
Semiconductor substrate for manufacturing transistors having back-gates thereon
ZHU HUILONG4 citations73
US9064954B2Jun 23, 2015
Semiconductor devices and methods for manufacturing the same
ZHU HUILONG3 citations63
US8957481B2Feb 17, 2015
Semiconductor structure and method for manufacturing the same
ZHU HUILONG2 citations63
UNIV NORTH CAROLINA STATE
1 patentLUO ZHIJIONG
1 patentGLOBALFOUNDRIES INC
1 patentSANDISK 3D LLC
1 patentShowing the top 50 of 85 patents by PatentIndex Score.