Inventor
ANAYAMA CHIKASHI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “ANAYAMA CHIKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
16 patentsUS5783845AJul 21, 1998
Semiconductor device and its manufacture utilizing crystal orientation dependence of impurity concentration
FUJITSU LTD21 citations92
US5684818ANov 4, 1997
Stepped substrate semiconductor laser for emitting light at slant portion
FUJITSU LTD19 citations92
US5668048ASep 16, 1997
Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration
FUJITSU LTD42 citations92
US5408487AApr 18, 1995
Semiconductor laser
FUJITSU LTD38 citations91
US5202285AApr 13, 1993
Semiconductor laser having double heterostructure and method of producing same
FUJITSU LTD26 citations91
US5381756AJan 17, 1995
Magnesium doping in III-V compound semiconductor
FUJITSU LTD17 citations82
US5436194AJul 25, 1995
Stripe laser diode having an improved efficiency for current confinement
FUJITSU LTD17 citations81
US5336635AAug 9, 1994
Manufacturing method of semiconductor laser of patterned-substrate type
FUJITSU LTD19 citations81
US5814531ASep 29, 1998
Method for forming semiconductor laser emitting light from slant plane
FUJITSU LTD8 citations74
US5568500AOct 22, 1996
Semiconductor laser
FUJITSU LTD15 citations74
US5458085AOct 17, 1995
Magnesium-doping in III-V compound semiconductor
FUJITSU LTD12 citations74
US5862166AJan 19, 1999
Semiconductor laser with light emitting slant plane and method of manufacturing the same
FUJITSU LTD12 citations73
US5799027AAug 25, 1998
Stepped substrate semiconductor laser for emitting light at slant portion
FUJITSU LTD14 citations73
US5375136ADec 20, 1994
Semiconductor laser of patterned-substrate type and structure thereof
FUJITSU LTD6 citations73
US5621748AApr 15, 1997
Stripe laser diode having an improved efficiency for current confinement
FUJITSU LTD13 citations72
US5255281AOct 19, 1993
Semiconductor laser having double heterostructure
FUJITSU LTD12 citations72
FUJITSU QUANTUM DEVICES LTD
4 patentsUS7081639B2Jul 25, 2006
Semiconductor photodetection device and fabrication process thereof
FUJITSU QUANTUM DEVICES LTD2 citations62
US6539040B2Mar 25, 2003
Laser diode and fabrication process thereof
FUJITSU QUANTUM DEVICES LTD5 citations62
US6686217B2Feb 3, 2004
Compound semiconductor device manufacturing method
FUJITSU QUANTUM DEVICES LTD0 citations40
US6501090B2Dec 31, 2002
Semiconductor laser and method of manufacturing the same
FUJITSU QUANTUM DEVICES LTD0 citations36