Inventor

TSURUDA TAKAHIRO

JP41 patents

⚠️ This page may combine multiple inventors who share the name “TSURUDA TAKAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSURUDA TAKAHIRO

MITSUBISHI ELECTRIC CORP

Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions

Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions

Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement

Semiconductor memory device capable of increasing chip yields while maintaining rapid operation

Semiconductor integrated circuit device in which influence of power supply noise on internal circuitry during operation of input/output buffer is prevented

Semiconductor memory device including an SOI substrate

Semiconductor memory and semiconductor device having SOI structure

Semiconductor device using an SOI substrate

Non-volatile semiconductor memory device having a low defective rate

Semiconductor memory device including an SOI substrate

Semiconductor memory device including an SOI substrate

Semiconductor device using an SOI substrate

Semiconductor memory device having hierarchical bit line structure

Semiconductor memory device having divided word line

Semiconductor memory device having hierarchical bit line structure employing improved bit line precharging system

Semiconductor memory device responsive to hierarchical internal potentials

Signal output circuit operating stably and arrangement of power supply interconnection line therefor in semiconductor integrated circuit device

High speed operable semiconductor memory device with memory blocks arranged about the center

High speed operable semiconductor memory device with memory blocks arranged about the center

Semiconductor memory device

Nonvolatile semiconductor memory device storing multi-bit data

Semiconductor memory device including an SOI substrate

Semiconductor memory device including an SOI substrate

Nonvolatile semiconductor memory device capable of writing multilevel data at high rate

Non-volatile semiconductor memory device with writing sequence enabling early-stage judgement of writing

Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area

Semiconductor device and method of manufacturing the same

Semiconductor device having SOI structure

Semiconductor memory and semiconductor device having SOI structure

Dynamic semiconductor memory device using sense amplifier as cache memory

Signal output circuit operating stably and arrangement of power supply interconnection line therefor in semiconductor integrated circuit device

Method of manufacturing a semiconductor device having an SOI structure

Method of manufacturing semiconductor device

Semiconductor memory device having hierarchical bit line structure employing improved bit line precharging system

RENESAS TECH CORP

Semiconductor memory device including an SOI substrate

Semiconductor memory device including an SOI substrate

Semiconductor device using an SOI substrate

Semiconductor memory device including an SOI substrate

FUJI OIL CO LTD

Process for producing imitation marzipan

MITSUBHISHI DENKI K K

Semiconductor device including a transistor having portions of source and drain regions removed by the same amount

SAMOTO MASAHIKO

Application of soybean emulsion composition to soybean-derived raw material-containing food or beverage