Inventor
BEDESCHI FERDINANDO
IT218 patents
⚠️ This page may combine multiple inventors who share the name “BEDESCHI FERDINANDO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
19 patentsUS9019754B1Apr 28, 2015
State determination in resistance variable memory
MICRON TECHNOLOGY INC89 citations98
US10446214B1Oct 15, 2019
Sense amplifier with split capacitors
MICRON TECHNOLOGY INC34 citations94
US10032496B1Jul 24, 2018
Variable filter capacitance
MICRON TECHNOLOGY INC23 citations94
US9721639B1Aug 1, 2017
Memory cell imprint avoidance
MICRON TECHNOLOGY INC23 citations94
US9449687B1Sep 20, 2016
Sense circuits, memory devices, and related methods for resistance variable memory
MICRON TECHNOLOGY INC30 citations94
US11594297B2Feb 28, 2023
Counter-based read in memory device
MICRON TECHNOLOGY INC5 citations86
US11056178B1Jul 6, 2021
Read operations based on a dynamic reference
MICRON TECHNOLOGY INC10 citations86
US11227648B2Jan 18, 2022
Multiple plate line architecture for multideck memory array
MICRON TECHNOLOGY INC4 citations84
US10726917B1Jul 28, 2020
Techniques for read operations
MICRON TECHNOLOGY INC4 citations84
US10692557B1Jun 23, 2020
Reference voltage management
MICRON TECHNOLOGY INC7 citations84
US10482954B2Nov 19, 2019
Phase change memory device
MICRON TECHNOLOGY INC4 citations84
US10446502B2Oct 15, 2019
Apparatuses and methods for shielded memory architecture
MICRON TECHNOLOGY INC5 citations84
US10083732B2Sep 25, 2018
Memory cell imprint avoidance
MICRON TECHNOLOGY INC6 citations84
US10049713B2Aug 14, 2018
Full bias sensing in a memory array
MICRON TECHNOLOGY INC8 citations84
US9966127B2May 8, 2018
Compensating for variations in selector threshold voltages
MICRON TECHNOLOGY INC6 citations84
US9779805B2Oct 3, 2017
Phase change memory device
MICRON TECHNOLOGY INC5 citations84
US9646689B2May 9, 2017
Refresh architecture and algorithm for non-volatile memories
MICRON TECHNOLOGY INC5 citations84
US9064565B2Jun 23, 2015
Phase change memory device
MICRON TECHNOLOGY INC6 citations84
US8837201B2Sep 16, 2014
Programming an array of resistance random access memory cells using unipolar pulses
MICRON TECHNOLOGY INC6 citations84
BEDESCHI FERDINANDO
13 patentsUS8467226B2Jun 18, 2013
Programming an array of resistance random access memory cells using unipolar pulses
BEDESCHI FERDINANDO51 citations98
US9070473B2Jun 30, 2015
Refresh architecture and algorithm for non-volatile memories
BEDESCHI FERDINANDO19 citations93
US8953360B2Feb 10, 2015
Apparatus and method for reading a phase-change memory cell
BEDESCHI FERDINANDO20 citations93
US8467237B2Jun 18, 2013
Read distribution management for phase change memory
BEDESCHI FERDINANDO21 citations93
US8259515B2Sep 4, 2012
Circuitry for reading phase-change memory cells having a clamping circuit
BEDESCHI FERDINANDO21 citations92
US7483296B2Jan 27, 2009
Memory device with unipolar and bipolar selectors
BEDESCHI FERDINANDO28 citations92
US9251897B2Feb 2, 2016
Methods for a phase-change memory array
BEDESCHI FERDINANDO4 citations84
US9105314B2Aug 11, 2015
Program-disturb decoupling for adjacent wordlines of a memory device
BEDESCHI FERDINANDO6 citations84
US9001575B2Apr 7, 2015
Encoding program bits to decouple adjacent wordlines in a memory device
BEDESCHI FERDINANDO9 citations84
US8954824B2Feb 10, 2015
Error detection or correction of stored signals after one or more heat events in one or more memory devices
BEDESCHI FERDINANDO6 citations84
US8910000B2Dec 9, 2014
Program-disturb management for phase change memory
BEDESCHI FERDINANDO14 citations84
US8719647B2May 6, 2014
Read bias management to reduce read errors for phase change memory
BEDESCHI FERDINANDO6 citations84
US8510628B2Aug 13, 2013
Method and apparatuses for customizable error correction of memory
BEDESCHI FERDINANDO14 citations84
OVONYX INC
7 patentsUS7154774B2Dec 26, 2006
Detecting switching of access elements of phase change memory cells
OVONYX INC137 citations99
US7388775B2Jun 17, 2008
Detecting switching of access elements of phase change memory cells
OVONYX INC98 citations98
US7570524B2Aug 4, 2009
Circuitry for reading phase change memory cells having a clamping circuit
OVONYX INC44 citations96
US7495944B2Feb 24, 2009
Reading phase change memories
OVONYX INC23 citations93
US7203087B2Apr 10, 2007
Fast reading, low consumption memory device and reading method thereof
OVONYX INC24 citations93
US7149132B2Dec 12, 2006
Biasing circuit for use in a non-volatile memory device
OVONYX INC25 citations93
US7020014B2Mar 28, 2006
Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
OVONYX INC36 citations92
ST MICROELECTRONICS SRL
5 patentsUS6754107B2Jun 22, 2004
Single supply voltage, nonvolatile phase change memory device with cascoded column selection and simultaneous word read/write operations
ST MICROELECTRONICS SRL78 citations98
US6816404B2Nov 9, 2004
Architecture of a phase-change nonvolatile memory array
ST MICROELECTRONICS SRL91 citations97
US7257039B2Aug 14, 2007
Bit line discharge control method and circuit for a semiconductor memory
ST MICROELECTRONICS SRL20 citations93
US7092277B2Aug 15, 2006
Phase-change memory device with biasing of deselected bit lines
ST MICROELECTRONICS SRL39 citations93
US7075841B2Jul 11, 2006
Writing circuit for a phase change memory device
ST MICROELECTRONICS SRL46 citations92
INTEL CORP
3 patentsUS7675792B2Mar 9, 2010
Generating reference currents compensated for process variation in non-volatile memories
INTEL CORP52 citations92
US7577024B2Aug 18, 2009
Streaming mode programming in phase change memories
INTEL CORP42 citations92
US7787291B2Aug 31, 2010
Programming a multilevel phase change memory cell
INTEL CORP28 citations91
PELLIZZER FABIO
2 patentsNUMONYX BV
1 patentShowing the top 50 of 218 patents by PatentIndex Score.