Inventor

CHANG CHIH-YANG

TW114 patents

⚠️ This page may combine multiple inventors who share the name “CHANG CHIH-YANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG CHIH-YANG

TAIWAN SEMICONDUCTOR MFG CO LTD

Top electrode blocking layer for RRAM device

Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process

Metal landing on top electrode of RRAM

RRAM cell with PMOS access transistor

RRAM device with data storage layer having increased height

Resistive random access memory (RRAM) and method of making

RRAM cell structure with laterally offset BEVA/TEVA

Metal landing on top electrode of RRAM

RRAM memory cell with multiple filaments

Metal landing method for RRAM technology

Resistance variable memory structure

One transistor and one resistive random access memory (RRAM) structure with spacer

Top electrode for device structures in interconnect

Resistive random access memory (RRAM) structure

Resistance variable memory structure and method of forming the same

Logic compatible RRAM structure and process

Resistive switching random access memory with asymmetric source and drain

Low form voltage resistive random access memory (RRAM)

RRAM cell structure with laterally offset BEVA/TEVA

Memory cells breakdown protection

Method for forming a flat bottom electrode via (BEVA) top surface for memory

Metal landing on top electrode of RRAM

Integrated circuit and method for fabricating the same

RRAM memory cell with multiple filaments

Interconnect landing method for RRAM technology

Interconnect landing method for RRAM technology

Top electrode for device structures in interconnect

Interconnect landing method for RRAM technology

Metal landing on top electrode of RRAM

Device and method for forming resistive random access memory cell

RRAM cell structure with laterally offset BEVA/TEVA

Step height reduction of memory element

RRAM device with data storage layer having increased height

RRAM cell with PMOS access transistor

TAIWAN SEMICONDUCTOR MFG

One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers

Logic compatible RRAM structure and process

One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacers

Resistive random access memory (RRAM) structure and method of making the RRAM structure

Resistance variable memory structure and method of forming the same

One transistor and one resistive random access memory (RRAM) structure with spacer

Resistance variable memory structure and method of forming the same

Low form voltage resistive random access memory (RRAM)

Resistance variable memory structure

Logic compatible RRAM structure and process

Memory circuit and method of programming memory circuit

CHANG CHIH-YANG

Variable shaped lamp shade of LED lamp

LED light source module

Variable shaped lamp shade of LED lamp

Variable shaped lamp shade of LED lamp

APPLIED MATERIALS INC

Method of fabricating an ultra low-k dielectric self-aligned via