Inventor
YANG CHIN-CHIEH
TW83 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHIN-CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS9601545B1Mar 21, 2017
Series MIM structures compatible with RRAM process
TAIWAN SEMICONDUCTOR MFG CO LTD61 citations98
US9172036B2Oct 27, 2015
Top electrode blocking layer for RRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations98
US10008662B2Jun 26, 2018
Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
TAIWAN SEMICONDUCTOR MFG CO LTD53 citations94
US9577009B1Feb 21, 2017
RRAM cell with PMOS access transistor
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US9553265B1Jan 24, 2017
RRAM device with data storage layer having increased height
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations94
US9431604B2Aug 30, 2016
Resistive random access memory (RRAM) and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD29 citations94
US9425392B2Aug 23, 2016
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US10504963B2Dec 10, 2019
RRAM memory cell with multiple filaments
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10163981B2Dec 25, 2018
Metal landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10050197B2Aug 14, 2018
Resistance variable memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10038139B2Jul 31, 2018
One transistor and one resistive random access memory (RRAM) structure with spacer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9780145B2Oct 3, 2017
Resistive random access memory (RRAM) structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9780302B2Oct 3, 2017
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9673391B2Jun 6, 2017
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9647207B2May 9, 2017
Resistive random access memory (RRAM) structure
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9537094B2Jan 3, 2017
Logic compatible RRAM structure and process
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9478638B2Oct 25, 2016
Resistive switching random access memory with asymmetric source and drain
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9466794B2Oct 11, 2016
Low form voltage resistive random access memory (RRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9112148B2Aug 18, 2015
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9076522B2Jul 7, 2015
Memory cells breakdown protection
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US10566519B2Feb 18, 2020
Method for forming a flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11751405B2Sep 5, 2023
Integrated circuit and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11201190B2Dec 14, 2021
RRAM memory cell with multiple filaments
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11094744B2Aug 17, 2021
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10903274B2Jan 26, 2021
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10862029B2Dec 8, 2020
Top electrode for device structures in interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10622300B2Apr 14, 2020
Series MIM structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10566387B2Feb 18, 2020
Interconnect landing method for RRAM technology
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276489B2Apr 30, 2019
Series MIM structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10199575B2Feb 5, 2019
RRAM cell structure with laterally offset BEVA/TEVA
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10158072B1Dec 18, 2018
Step height reduction of memory element
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9941470B2Apr 10, 2018
RRAM device with data storage layer having increased height
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9876167B2Jan 23, 2018
High yield RRAM cell with optimized film scheme
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9773552B2Sep 26, 2017
RRAM cell with PMOS access transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11751485B2Sep 5, 2023
Flat bottom electrode via (BEVA) top surface for memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10796759B2Oct 6, 2020
Method and apparatus for reading RRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10311952B2Jun 4, 2019
Method and apparatus for reading RRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9934853B2Apr 3, 2018
Method and apparatus for reading RRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
TAIWAN SEMICONDUCTOR MFG
12 patentsUS8963114B2Feb 24, 2015
One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers
TAIWAN SEMICONDUCTOR MFG32 citations94
US9231197B2Jan 5, 2016
Logic compatible RRAM structure and process
TAIWAN SEMICONDUCTOR MFG23 citations93
US9099647B2Aug 4, 2015
One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacers
TAIWAN SEMICONDUCTOR MFG16 citations93
US9023699B2May 5, 2015
Resistive random access memory (RRAM) structure and method of making the RRAM structure
TAIWAN SEMICONDUCTOR MFG21 citations93
US9349953B2May 24, 2016
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG6 citations84
US9331277B2May 3, 2016
One transistor and one resistive random access memory (RRAM) structure with spacer
TAIWAN SEMICONDUCTOR MFG6 citations84
US9312482B2Apr 12, 2016
Resistance variable memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG9 citations84
US9231205B2Jan 5, 2016
Low form voltage resistive random access memory (RRAM)
TAIWAN SEMICONDUCTOR MFG6 citations84
US8921818B2Dec 30, 2014
Resistance variable memory structure
TAIWAN SEMICONDUCTOR MFG10 citations84
US8742390B1Jun 3, 2014
Logic compatible RRAM structure and process
TAIWAN SEMICONDUCTOR MFG15 citations84
US9368722B2Jun 14, 2016
Resistive random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG3 citations73
US9236570B2Jan 12, 2016
Resistive memory cell array with top electrode bit line
TAIWAN SEMICONDUCTOR MFG3 citations73
Showing the top 50 of 83 patents by PatentIndex Score.