Inventor
KANAZAWA TAKAMITSU
JP17 patents
⚠️ This page may combine multiple inventors who share the name “KANAZAWA TAKAMITSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
11 patentsUS9048119B2Jun 2, 2015
Semiconductor device with normally off and normally on transistors
RENESAS ELECTRONICS CORP12 citations84
US10049968B2Aug 14, 2018
Semiconductor device
RENESAS ELECTRONICS CORP2 citations73
US9641102B2May 2, 2017
Semiconductor device
RENESAS ELECTRONICS CORP5 citations72
US10236274B2Mar 19, 2019
Semiconductor device with metal patterns having convex and concave sides
RENESAS ELECTRONICS CORP2 citations71
US9698125B2Jul 4, 2017
Power module with a plurality of patterns with convex and concave side
RENESAS ELECTRONICS CORP4 citations71
US9906165B2Feb 27, 2018
Semiconductor module
RENESAS ELECTRONICS CORP3 citations69
US8039954B2Oct 18, 2011
Bidirectional switch module
RENESAS ELECTRONICS CORP5 citations62
US9887151B2Feb 6, 2018
Semiconductor device
RENESAS ELECTRONICS CORP1 citations52
US9502388B2Nov 22, 2016
Switching element with a series-connected junction FET (JFET) and MOSFET achieving both improved withstand voltage and reduced on-resistance
RENESAS ELECTRONICS CORP1 citations52
US9666518B1May 30, 2017
Semiconductor device
RENESAS ELECTRONICS CORP1 citations50
US9576885B2Feb 21, 2017
Semiconductor device
RENESAS ELECTRONICS CORP0 citations50
RENESAS TECH CORP
3 patentsKANAZAWA TAKAMITSU
3 patentsUS8222651B2Jul 17, 2012
Semiconductor device
KANAZAWA TAKAMITSU18 citations91
US9263435B2Feb 16, 2016
Switching element with a series-connected junction FET (JFET) and MOSFET achieving both improved withstand voltage and reduced on-resistance
KANAZAWA TAKAMITSU3 citations71
US8629467B2Jan 14, 2014
Semiconductor device
KANAZAWA TAKAMITSU3 citations61