P

Inventor

SURI SATYARTH

US29 patents
⚠️ This page may combine multiple inventors who share the name “SURI SATYARTH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

20 patents
US10937689B2Mar 2, 2021

Self-aligned hard masks with converted liners

INTEL CORP7 citations84
US10158065B2Dec 18, 2018

Spin-transfer torque memory (STTM) devices having magnetic contacts

INTEL CORP6 citations84
US9882121B2Jan 30, 2018

Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

INTEL CORP7 citations84
US10832847B2Nov 10, 2020

Low stray field magnetic memory

INTEL CORP2 citations73
US10832749B2Nov 10, 2020

Perpendicular magnetic memory with symmetric fixed layers

INTEL CORP5 citations73
US10580973B2Mar 3, 2020

Spin-transfer torque memory (STTM) devices having magnetic contacts

INTEL CORP2 citations73
US9779794B2Oct 3, 2017

Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts

INTEL CORP5 citations73
US9496486B2Nov 15, 2016

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

INTEL CORP4 citations73
US10340443B2Jul 2, 2019

Perpendicular magnetic memory with filament conduction path

INTEL CORP1 citations63
US10964886B2Mar 30, 2021

Spin transfer torque memory devices having heusler magnetic tunnel junctions

INTEL CORP0 citations62
US10546772B2Jan 28, 2020

Self-aligned via below subtractively patterned interconnect

INTEL CORP1 citations62
US10418415B2Sep 17, 2019

Interconnect capping process for integration of MRAM devices and the resulting structures

INTEL CORP1 citations62
US10365894B2Jul 30, 2019

Random number generator

INTEL CORP1 citations62
US7927959B2Apr 19, 2011

Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby

INTEL CORP3 citations61
US9224794B2Dec 29, 2015

Embedded memory device having MIM capacitor formed in excavated structure

INTEL CORP1 citations60
US10707409B2Jul 7, 2020

Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

INTEL CORP0 citations52
US10395707B2Aug 27, 2019

Amorphous seed layer for improved stability in perpendicular STTM stack

INTEL CORP0 citations52
US10388858B2Aug 20, 2019

Fabrication of crystalline magnetic films for PSTTM applications

INTEL CORP0 citations52
US10381556B2Aug 13, 2019

Spin transfer torque memory (STTM), methods of forming the same using a non-conformal insulator, and devices including the same

INTEL CORP0 citations52
US10580975B2Mar 3, 2020

Spin transfer torque memory (STTM), methods of forming the same using volatile compound forming elements, and devices including the same

INTEL CORP0 citations42

DOYLE BRIAN S

3 patents

KARPOV ELIJAH V

2 patents

RADOSAVLJEVIC MARKO

1 patent

GOEL NITI

1 patent

APPLE INC

1 patent

KEATING STEVEN J

1 patent