Inventor
KHALIL SAMEH G
US11 patents
⚠️ This page may combine multiple inventors who share the name “KHALIL SAMEH G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HRL LAB LLC
8 patentsUS9490357B2Nov 8, 2016
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
HRL LAB LLC7 citations83
US9799726B1Oct 24, 2017
Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
HRL LAB LLC7 citations82
US9601610B1Mar 21, 2017
Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
HRL LAB LLC11 citations82
US9077335B2Jul 7, 2015
Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops
HRL LAB LLC13 citations82
US10700201B2Jun 30, 2020
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
HRL LAB LLC2 citations72
US8999780B1Apr 7, 2015
Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices
HRL LAB LLC3 citations62
US10325997B2Jun 18, 2019
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas
HRL LAB LLC0 citations51
US8933487B2Jan 13, 2015
Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask
HRL LAB LLC0 citations51
KHALIL SAMEH G
3 patentsUS8680536B2Mar 25, 2014
Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
KHALIL SAMEH G15 citations90
US9379195B2Jun 28, 2016
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
KHALIL SAMEH G3 citations71
US9000484B2Apr 7, 2015
Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
KHALIL SAMEH G0 citations50