Inventor
CHIANG CHEN-HAO
TW39 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG CHEN-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS9525054B2Dec 20, 2016
High electron mobility transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11749762B2Sep 5, 2023
Semiconductor device comprising a photodetector with reduced dark current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9899493B2Feb 20, 2018
High electron mobility transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9548376B2Jan 17, 2017
Method of manufacturing a semiconductor device including a barrier structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11551927B2Jan 10, 2023
High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10867792B2Dec 15, 2020
High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12074036B2Aug 27, 2024
Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11171015B2Nov 9, 2021
Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10991819B2Apr 27, 2021
High electron mobility transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10109729B2Oct 23, 2018
High electron mobility transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9425276B2Aug 23, 2016
High electron mobility transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12369352B2Jul 22, 2025
Thin film transfer using substrate with etch stop layer and diffusion barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12328965B2Jun 10, 2025
In-situ cap for germanium photodetector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984486B2May 14, 2024
Method of implanting dopants into a group III-nitride structure and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11949030B2Apr 2, 2024
In-situ cap for germanium photodetector
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11804531B2Oct 31, 2023
Thin film transfer using substrate with etch stop layer and diffusion barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594606B2Feb 28, 2023
Method of implanting dopants into a group III-nitride structure and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937878B2Mar 2, 2021
Method of implanting dopants into a group III-nitride structure and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937900B2Mar 2, 2021
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12308230B2May 20, 2025
High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12136679B2Nov 5, 2024
Semiconductor device comprising a photodetector with reduced dark current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164038B2Dec 25, 2018
Method of implanting dopants into a group III-nitride structure and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10079296B2Sep 18, 2018
High electron mobility transistor with indium nitride layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9478632B2Oct 25, 2016
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US12439709B2Oct 7, 2025
Image sensor with diffusion barrier structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12327723B2Jun 10, 2025
Passive cap for germanium-containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
8 patentsUS9368610B2Jun 14, 2016
High electron mobility transistor with indium nitride layer
TAIWAN SEMICONDUCTOR MFG6 citations84
US9245991B2Jan 26, 2016
Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing
TAIWAN SEMICONDUCTOR MFG8 citations84
US9236464B2Jan 12, 2016
Method of forming a high electron mobility transistor
TAIWAN SEMICONDUCTOR MFG5 citations84
US8969882B1Mar 3, 2015
Transistor having an ohmic contact by screen layer and method of making the same
TAIWAN SEMICONDUCTOR MFG6 citations84
US8901609B1Dec 2, 2014
Transistor having doped substrate and method of making the same
TAIWAN SEMICONDUCTOR MFG12 citations83
US9076854B2Jul 7, 2015
Semiconductor device
TAIWAN SEMICONDUCTOR MFG4 citations73
US8975641B1Mar 10, 2015
Transistor having an ohmic contact by gradient layer and method of making the same
TAIWAN SEMICONDUCTOR MFG6 citations73
US9202875B2Dec 1, 2015
High electron mobility transistor with indium nitride layer
TAIWAN SEMICONDUCTOR MFG0 citations52