Inventor
OHBA KAZUHIRO
JP56 patents
⚠️ This page may combine multiple inventors who share the name “OHBA KAZUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
30 patentsUS7315053B2Jan 1, 2008
Magnetoresistive effect element and magnetic memory device
SONY CORP42 citations93
US7026671B2Apr 11, 2006
Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
SONY CORP51 citations93
US6831314B2Dec 14, 2004
Magnetoresistive effect element and magnetic memory device
SONY CORP45 citations93
US7262064B2Aug 28, 2007
Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
SONY CORP49 citations92
US6879514B2Apr 12, 2005
Magnetoresistive element and magnetic memory unit
SONY CORP19 citations91
US7888755B2Feb 15, 2011
Magnetic storage device with intermediate layers having different sheet resistivities
SONY CORP12 citations84
US7034348B2Apr 25, 2006
Magnetoresistive effect element and magnetic memory device
SONY CORP16 citations84
US6990014B2Jan 24, 2006
Magnetoresistive element and magnetic memory unit
SONY CORP14 citations84
US10084017B2Sep 25, 2018
Switch device and storage unit having a switch layer between first and second electrodes
SONY CORP13 citations83
US7696511B2Apr 13, 2010
Memory element and memory device
SONY CORP13 citations83
US6999288B2Feb 14, 2006
Magnetoresistive effect element and magnetic memory device
SONY CORP8 citations74
US6992868B2Jan 31, 2006
Magnetoresistive effect element and magnetic memory device
SONY CORP6 citations74
US6879473B2Apr 12, 2005
Magnetoresistive device and magnetic memory device
SONY CORP10 citations74
US6815745B2Nov 9, 2004
Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device
SONY CORP12 citations74
US9466791B2Oct 11, 2016
Storage device and storage unit
SONY CORP4 citations73
US9761796B2Sep 12, 2017
Storage device and storage unit with ion source layer and resistance change layer
SONY CORP3 citations72
US9543514B2Jan 10, 2017
Memory component, memory device, and method of operating memory device
SONY CORP2 citations72
US11004902B2May 11, 2021
Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element
SONY CORP0 citations62
US10971685B2Apr 6, 2021
Selective device, memory cell, and storage unit
SONY CORP0 citations62
US10418416B2Sep 17, 2019
Memory device and memory unit
SONY CORP1 citations62
US9240549B2Jan 19, 2016
Memory component, memory device, and method of operating memory device
SONY CORP2 citations62
US8730709B2May 20, 2014
Memory component, memory device, and method of operating memory device
SONY CORP3 citations62
US9356232B2May 31, 2016
Method of making memory element with ion source layer comprised of two or more unit IO source layers
SONY CORP0 citations52
US9246090B2Jan 26, 2016
Storage device and storage unit
SONY CORP1 citations52
US9231200B2Jan 5, 2016
Memory element and memory device
SONY CORP0 citations52
US9203018B2Dec 1, 2015
Memory element and memory device
SONY CORP0 citations52
US8847194B2Sep 30, 2014
Memory component including an ion source layer and a resistance change layer, and a memory device using the same
SONY CORP0 citations52
US7700982B2Apr 20, 2010
Magnetoresistive effect element and magnetic memory device
SONY CORP1 citations52
US10879312B2Dec 29, 2020
Memory device and memory unit
SONY CORP0 citations51
US9577187B2Feb 21, 2017
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
SONY CORP0 citations51
SONY SEMICONDUCTOR SOLUTIONS CORP
10 patentsUS9543512B2Jan 10, 2017
Switch device and storage unit
SONY SEMICONDUCTOR SOLUTIONS CORP17 citations83
US11462685B2Oct 4, 2022
Switch device, storage apparatus, and memory system incorporating boron and carbon
SONY SEMICONDUCTOR SOLUTIONS CORP2 citations73
US11018189B2May 25, 2021
Storage apparatus
SONY SEMICONDUCTOR SOLUTIONS CORP3 citations72
US10804321B2Oct 13, 2020
Switch device and storage unit
SONY SEMICONDUCTOR SOLUTIONS CORP2 citations72
US10529777B2Jan 7, 2020
Switch device and storage unit
SONY SEMICONDUCTOR SOLUTIONS CORP5 citations72
US10403680B2Sep 3, 2019
Switch device and storage unit
SONY SEMICONDUCTOR SOLUTIONS CORP3 citations72
US11522132B2Dec 6, 2022
Storage device and storage unit with a chalcogen element
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations62
US11152428B2Oct 19, 2021
Selection device and storage apparatus
SONY SEMICONDUCTOR SOLUTIONS CORP1 citations62
US11183633B2Nov 23, 2021
Switch device, storage apparatus, and memory system
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations51
US10069066B2Sep 4, 2018
Target, method for producing the same, memory, and method for producing the same
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations50
OHBA KAZUHIRO
5 patentsUS8699260B2Apr 15, 2014
Memory element and memory device
OHBA KAZUHIRO5 citations83
US8427860B2Apr 23, 2013
Memory component, memory device, and method of operating memory device
OHBA KAZUHIRO10 citations82
US8492740B2Jul 23, 2013
Memory element and memory device
OHBA KAZUHIRO6 citations72
US8912516B2Dec 16, 2014
Memory element with ion source layer and memory device
OHBA KAZUHIRO2 citations62
US8816313B2Aug 26, 2014
Memory element and memory device
OHBA KAZUHIRO0 citations51
YASUDA SHUICHIRO
2 patentsSHIMUTA MASAYUKI
1 patentMIZUGUCHI TETSUYA
1 patentRICOH CO LTD
1 patentShowing the top 50 of 56 patents by PatentIndex Score.