Inventor
MIZUGUCHI TETSUYA
JP45 patents
⚠️ This page may combine multiple inventors who share the name “MIZUGUCHI TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
30 patentsUS7315053B2Jan 1, 2008
Magnetoresistive effect element and magnetic memory device
SONY CORP42 citations93
US7307270B2Dec 11, 2007
Memory element and memory device
SONY CORP26 citations93
US7026671B2Apr 11, 2006
Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
SONY CORP51 citations93
US6831314B2Dec 14, 2004
Magnetoresistive effect element and magnetic memory device
SONY CORP45 citations93
US7262064B2Aug 28, 2007
Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
SONY CORP49 citations92
US6621666B2Sep 16, 2003
Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity
SONY CORP25 citations92
US7034348B2Apr 25, 2006
Magnetoresistive effect element and magnetic memory device
SONY CORP16 citations84
US6990014B2Jan 24, 2006
Magnetoresistive element and magnetic memory unit
SONY CORP14 citations84
US7696511B2Apr 13, 2010
Memory element and memory device
SONY CORP13 citations83
US7786459B2Aug 31, 2010
Memory element and memory device comprising memory layer positioned between first and second electrodes
SONY CORP7 citations74
US6999288B2Feb 14, 2006
Magnetoresistive effect element and magnetic memory device
SONY CORP8 citations74
US6992868B2Jan 31, 2006
Magnetoresistive effect element and magnetic memory device
SONY CORP6 citations74
US6967386B2Nov 22, 2005
Magnetic memory device
SONY CORP8 citations74
US6879473B2Apr 12, 2005
Magnetoresistive device and magnetic memory device
SONY CORP10 citations74
US6815745B2Nov 9, 2004
Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory device
SONY CORP12 citations74
US6765769B2Jul 20, 2004
Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
SONY CORP6 citations74
US9543514B2Jan 10, 2017
Memory component, memory device, and method of operating memory device
SONY CORP2 citations72
US7206173B2Apr 17, 2007
Magnetoresistive-effect element having a prominent magnetoresistive effect, and method of manufacturing same
SONY CORP4 citations63
US7173300B2Feb 6, 2007
Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same
SONY CORP5 citations63
US7099124B2Aug 29, 2006
Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
SONY CORP2 citations63
US6287709B1Sep 11, 2001
Spin-valve film, magnetoresistance-effect device and magnetoresistance-effect magnetic head
SONY CORP4 citations63
US9240549B2Jan 19, 2016
Memory component, memory device, and method of operating memory device
SONY CORP2 citations62
US8730709B2May 20, 2014
Memory component, memory device, and method of operating memory device
SONY CORP3 citations62
US7675053B2Mar 9, 2010
Memory device comprising a memory layer and a metal chalcogenide ion-source layer
SONY CORP3 citations62
US9356232B2May 31, 2016
Method of making memory element with ion source layer comprised of two or more unit IO source layers
SONY CORP0 citations52
US9231200B2Jan 5, 2016
Memory element and memory device
SONY CORP0 citations52
US7700982B2Apr 20, 2010
Magnetoresistive effect element and magnetic memory device
SONY CORP1 citations52
US9577187B2Feb 21, 2017
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
SONY CORP0 citations51
US8873281B2Oct 28, 2014
Memory element and memory device
SONY CORP0 citations51
US8685786B2Apr 1, 2014
Method of manufacturing a semiconductor memory device having a resistance change memory layer
SONY CORP0 citations51
OHBA KAZUHIRO
4 patentsUS8427860B2Apr 23, 2013
Memory component, memory device, and method of operating memory device
OHBA KAZUHIRO10 citations82
US8492740B2Jul 23, 2013
Memory element and memory device
OHBA KAZUHIRO6 citations72
US8912516B2Dec 16, 2014
Memory element with ion source layer and memory device
OHBA KAZUHIRO2 citations62
US8816313B2Aug 26, 2014
Memory element and memory device
OHBA KAZUHIRO0 citations51
MIZUGUCHI TETSUYA
3 patentsUS8547735B2Oct 1, 2013
Memory element and memory device
MIZUGUCHI TETSUYA10 citations81
US8885385B2Nov 11, 2014
Memory element and memory device
MIZUGUCHI TETSUYA2 citations61
US9202560B2Dec 1, 2015
Memory element and memory device with ion source layer and resistance change layer
MIZUGUCHI TETSUYA0 citations50