Inventor
YASUDA SHUICHIRO
JP44 patents
⚠️ This page may combine multiple inventors who share the name “YASUDA SHUICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
13 patentsUS8835895B2Sep 16, 2014
Memory device and fabrication process thereof
SONY CORP8 citations84
US9543514B2Jan 10, 2017
Memory component, memory device, and method of operating memory device
SONY CORP2 citations72
US8369128B2Feb 5, 2013
Storage device and information rerecording method
SONY CORP4 citations63
US8363447B2Jan 29, 2013
Storage device and information recording and verification method
SONY CORP2 citations63
US9240549B2Jan 19, 2016
Memory component, memory device, and method of operating memory device
SONY CORP2 citations62
US8730709B2May 20, 2014
Memory component, memory device, and method of operating memory device
SONY CORP3 citations62
US9356232B2May 31, 2016
Method of making memory element with ion source layer comprised of two or more unit IO source layers
SONY CORP0 citations52
US9231200B2Jan 5, 2016
Memory element and memory device
SONY CORP0 citations52
US9203018B2Dec 1, 2015
Memory element and memory device
SONY CORP0 citations52
US8847194B2Sep 30, 2014
Memory component including an ion source layer and a resistance change layer, and a memory device using the same
SONY CORP0 citations52
US8350248B2Jan 8, 2013
Memory element and memory device
SONY CORP0 citations52
US9263670B2Feb 16, 2016
Memory element and memory device
SONY CORP0 citations51
US8873281B2Oct 28, 2014
Memory element and memory device
SONY CORP0 citations51
YASUDA SHUICHIRO
6 patentsUS8569732B2Oct 29, 2013
Memory element and memory device
YASUDA SHUICHIRO5 citations83
US8295074B2Oct 23, 2012
Memory cell
YASUDA SHUICHIRO11 citations83
US10658588B2May 19, 2020
Memory cell switch device
YASUDA SHUICHIRO2 citations72
US8710482B2Apr 29, 2014
Memory component and memory device
YASUDA SHUICHIRO2 citations62
US8796657B2Aug 5, 2014
Memory element and memory device
YASUDA SHUICHIRO0 citations51
US8546782B2Oct 1, 2013
Memory element and memory device
YASUDA SHUICHIRO0 citations50
MICRON TECHNOLOGY INC
6 patentsUS9209388B2Dec 8, 2015
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC4 citations73
US8921821B2Dec 30, 2014
Memory cells
MICRON TECHNOLOGY INC2 citations63
US10923658B2Feb 16, 2021
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC0 citations62
US10388871B2Aug 20, 2019
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC0 citations52
US9444042B2Sep 13, 2016
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC0 citations52
US9508931B2Nov 29, 2016
Memory cells and methods of forming memory cells
MICRON TECHNOLOGY INC0 citations48
OHBA KAZUHIRO
5 patentsUS8699260B2Apr 15, 2014
Memory element and memory device
OHBA KAZUHIRO5 citations83
US8427860B2Apr 23, 2013
Memory component, memory device, and method of operating memory device
OHBA KAZUHIRO10 citations82
US8492740B2Jul 23, 2013
Memory element and memory device
OHBA KAZUHIRO6 citations72
US8912516B2Dec 16, 2014
Memory element with ion source layer and memory device
OHBA KAZUHIRO2 citations62
US8816313B2Aug 26, 2014
Memory element and memory device
OHBA KAZUHIRO0 citations51
MIZUGUCHI TETSUYA
3 patentsUS8547735B2Oct 1, 2013
Memory element and memory device
MIZUGUCHI TETSUYA10 citations81
US8885385B2Nov 11, 2014
Memory element and memory device
MIZUGUCHI TETSUYA2 citations61
US9202560B2Dec 1, 2015
Memory element and memory device with ion source layer and resistance change layer
MIZUGUCHI TETSUYA0 citations50
SHIMUTA MASAYUKI
2 patentsSONY SEMICONDUCTOR SOLUTIONS CORP
2 patentsUS11462685B2Oct 4, 2022
Switch device, storage apparatus, and memory system incorporating boron and carbon
SONY SEMICONDUCTOR SOLUTIONS CORP2 citations73
US10490740B2Nov 26, 2019
Non-volatile memory system with reliability enhancement mechanism and method of manufacture thereof
SONY SEMICONDUCTOR SOLUTIONS CORP0 citations50